Ultra-thin oxide bonding for si to si dual orientation bonding

Abstract

A multi-layered substrate with bulk substrate characteristics and processes for the fabrication of such substrates are herein disclosed. The multi-layered substrate can include a first layer, a second layer and an interfacial layer therebetween. The first and second layers can be silicon, germanium, or any other suitable material of the same or different crystal orientations. The interfacial layer can be an oxide layer from about 5 Angstroms to about 50 Angstroms.

1 . A device comprising:
 a multi-layer substrate comprising a first layer, an interfacial layer and a second layer, the interfacial layer disposed between the first layer and the second layer, the multi-layer substrate having a characteristic of a bulk substrate when the interfacial layer is less than 15 Angstroms.   
     
     
         2 . The device of  claim 1 , wherein the first layer has a first crystal orientation and the second layer has a second crystal orientation. 
     
     
         3 . The device of  claim 2 , wherein the first crystal orientation is one of ( 100 ), ( 110 ) or ( 111 ). 
     
     
         4 . The device of  claim 2 , wherein the second crystal orientation is one of ( 100 ), ( 110 ) or ( 111 ). 
     
     
         5 . The device of  claim 1 , wherein the substrate bonded interface is substantially free of voids. 
     
     
         6 . The device of  claim 1 , wherein the interfacial layer is between 5 Angstroms and 25 Angstroms. 
     
     
         7 . The device of  claim 1 , wherein at least one of the first layer and second layer is hydrogen implanted.