Solid-state imaging device and method of producing solid-state imaging device

Abstract

A solid-state imaging device includes a sensor including an impurity diffusion layer provided in a surface layer of a semiconductor substrate; and an oxide insulating film containing carbon, the oxide insulating film being provided on the sensor.

1 . A solid-state imaging device comprising:
 a sensor including an impurity diffusion layer provided in a surface layer of a semiconductor substrate; and   an oxide insulating film containing carbon, the oxide insulating film being provided on the sensor.   
     
     
         2 . The solid-state imaging device according to  claim 1 , wherein the oxide insulating film is provided as a negative-charge accumulation layer having a negative fixed charge. 
     
     
         3 . The solid-state imaging device according to  claim 1 , wherein the negative-charge accumulation layer has a carbon concentration of 6×10 19  atoms/cm 3  or more. 
     
     
         4 . The solid-state imaging device according to  claim 1 ,
 wherein the oxide insulating film is provided as a negative-charge accumulation layer having a negative fixed charge, and   a hole accumulation layer formed by an action of a negative charge accumulated in the negative-charge accumulation layer is provided in a surface layer of the sensor.   
     
     
         5 . The solid-state imaging device according to  claim 1 , wherein the oxide insulating film is composed of a metal oxide. 
     
     
         6 . The solid-state imaging device according to  claim 5 , wherein the metal oxide is hafnium oxide (HfO 2 ), zirconium oxide (ZrO 2 ), aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), or tantalum oxide (Ta 2 O 5 ). 
     
     
         7 . The solid-state imaging device according to  claim 1 , wherein the oxide insulating film is composed of a silicon-based material. 
     
     
         8 . The solid-state imaging device according to  claim 7 , wherein the oxide insulating film composed of the silicon-based material contains at least one of boron and phosphorus. 
     
     
         9 . The solid-state imaging device according to  claim 1 , wherein the sensor is a diode including a P-type diffusion layer and an N-type diffusion layer disposed on the P-type diffusion layer. 
     
     
         10 . The solid-state imaging device according to  claim 9 , further comprising:
 an N-type diffusion layer disposed on one side of the diode with a gate electrode provided on the semiconductor substrate and between the diode and the N-type diffusion layer.   
     
     
         11 . A method of producing a solid-state imaging device comprising the steps of:
 forming a sensor including an impurity diffusion layer in a surface layer of a semiconductor substrate; and   depositing an oxide insulating film containing carbon on the sensor while controlling the carbon concentration by controlling a flow rate ratio of a material gas containing carbon and the deposition temperature.   
     
     
         12 . The method according to  claim 11 , wherein in the step of depositing the oxide insulating film, an oxide insulating film composed of a metal oxide is formed by one of an atomic layer deposition (ALD) method and a metal-organic chemical vapor deposition (MOCVD) method. 
     
     
         13 . The method according to  claim 11 , wherein in the step of depositing the oxide insulating film, an oxide insulating film composed of a silicon oxide-based material is formed by a chemical vapor deposition (CVD) method using tetraethoxysilane (TEOS) gas.