US2010055869A1PendingUtilityA1

Semiconductor device and method of manufacturing same

54
Assignee: TOSHIBA KKPriority: May 27, 2005Filed: Oct 2, 2009Published: Mar 4, 2010
Est. expiryMay 27, 2025(expired)· nominal 20-yr term from priority
Inventors:Osamu ArisumiMasahiro KiyotoshiKatsuhiko HiedaYoshitaka Tsunashima
H10B 41/35H10B 41/30
54
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Claims

Abstract

A method of manufacturing a semiconductor device comprises forming a trench in a semiconductor substrate, forming a first insulating film having a first recessed portion in the trench, forming a coating film so as to fill the first recessed portion therewith, transforming the coating film into a second insulating film, planarizing the second insulating film to expose the first insulating film and the second insulating film, removing at least the second insulating film from the first recessed portion to moderate an aspect ratio for the first recessed portion formed in the trench, thereby forming a second recessed portion therein, and forming a third insulating film on a surface of the semiconductor substrate so as to fill the second recessed portion therewith.

Claims

exact text as granted — not AI-modified
1 .- 8 . (canceled) 
   
   
       9 . A method of manufacturing a semiconductor device comprising:
 forming a trench in a semiconductor substrate;   forming a first insulating film having a recessed portion in the trench;   planarizing an upper side of the first insulating film by a CMP method using a slurry;   removing at least the slurry remaining in the recessed portion of the first insulating film by a chemical solution to moderate an aspect ratio for the recessed portion formed in the first insulating film; and   forming a second insulating film on a surface of the semiconductor substrate so as to fill the recessed portion therewith.   
   
   
       10 . The method according to  claim 9 , wherein the slurry is comprised of a single particle containing hydrated silica as a main component. 
   
   
       11 . The method according to  claim 9 , wherein the first insulating film is comprised of an HDP film. 
   
   
       12 . The method according to  claim 9 , wherein the second insulating film is constituted by an HDP film. 
   
   
       13 . The method according to  claim 9 , wherein an annealing process is carried out after the second insulating film is formed. 
   
   
       14 .- 17 . (canceled)

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