Semiconductor device and method of manufacturing the same

Abstract

Disclosed is a method for manufacturing a semiconductor device comprising implanting ions of an impurity element into a semiconductor region, implanting, into the semiconductor region, ions of a predetermined element which is a group IV element or an element having the same conductivity type as the impurity element and larger in mass number than the impurity element, and irradiating a region into which the impurity element and the predetermined element are implanted with light to anneal the region, the light having an emission intensity distribution, a maximum point of the distribution existing in a wavelength region of not more than 600 nm.

1 .- 17 . (canceled) 
   
   
       18 . A method for manufacturing a semiconductor device comprising:
 implanting ions of an impurity element into a semiconductor region;   implanting, into the semiconductor region, ions of a predetermined element which is a group IV element or an element having the same conductivity type as the impurity element and larger in mass number than the impurity element; and   annealing an amorphous region into which the ions of the impurity element and the predetermined element are implanted by irradiating the amorphous region with light of a flash lamp to activate the implanted ions of the impurity element and form an impurity diffusion layer containing the activated implanted ions;   wherein annealing the amorphous region by irradiating the amorphous region with the light of the flash lamp is performed with the semiconductor region preheated under a condition that an amorphous state of the amorphous region is maintained.   
   
   
       19 . The method according to  claim 18 , further comprising forming a conductive film on the semiconductor region before annealing the amorphous region. 
   
   
       20 . The method according to  claim 18 , wherein the predetermined element is Si, Ge, Sn, Pb, Ga, In, Tl, Sb, or Bi. 
   
   
       21 . The method according to  claim 18 , wherein an emission period of the light is not more than 100 msec. 
   
   
       22 . The method according to  claim 18 , wherein an irradiation energy density of the light is not less than 10 J/cm 2  and not more than 60 J/cm 2 . 
   
   
       23 . A method for manufacturing a semiconductor device comprising:
 forming a gate insulating film on a semiconductor substrate;   forming a gate electrode on the gate insulating film;   implanting ions of an impurity element into the semiconductor substrate by using at least the gate electrode as a mask;   implanting, into the semiconductor substrate, ions of a predetermined element which is a group IV element or an element having the same conductivity type as the impurity element and larger in mass number than the impurity element, by using at least the gate electrode as a mask; and   annealing an amorphous region into which the ions of the impurity element and the predetermined element are implanted by irradiating the amorphous region with light of a flash lamp to activate the implanted ions of the impurity element to form an impurity diffusion layer containing the activated implanted ions;   wherein annealing the amorphous region by irradiating the amorphous region with the light of the flash lamp is performed with the semiconductor substrate preheated under a condition that an amorphous state of the amorphous region is maintained.   
   
   
       24 . The method according to  claim 23 , wherein the predetermined element is Si, Ge, Sn, Pb, Ga, In, Tl, Sb, or Bi. 
   
   
       25 . The method according to  claim 23 , wherein an emission period of the light is not more than 100 msec. 
   
   
       26 . The method according to  claim 23 , wherein an irradiation energy density of the light is not less than 10 J/cm 2  and not more than 60 J/cm 2 .