Light-emitting device, electronic equipment, and process of producing light-emitting device

Abstract

A light-emitting device includes a light-reflecting layer, a first electrode disposed on or above the light-reflecting layer, a semi-transparent reflective second electrode, a light-emitting function layer disposed between the first electrode and the second electrode, and an electron-injection layer disposed between the light-emitting function layer and the second electrode. The second electrode is made of an Ag alloy having an Ag content of from 50% by atoms to 98% by atoms.

1 . A light-emitting device comprising:
 a light-reflecting layer;   a first electrode disposed on or above the light-reflecting layer;   a semi-transparent reflective second electrode;   a light-emitting function layer disposed between the first electrode and the second electrode; and   an electron-injection layer disposed between the light-emitting function layer and the second electrode, wherein   the second electrode is made of an Ag alloy having an Ag content of from 50% by atoms to 98% by atoms.   
   
   
       2 . The light-emitting device according to  claim 1 , wherein
 the second electrode has a resistivity of 31×10 −8  Ω·m or less.   
   
   
       3 . The light-emitting device according to  claim 1 , wherein
 the second electrode is made of an alloy of a metal of Mg, Cu, Zn, Pd, Nd, or Al and Ag.   
   
   
       4 . The light-emitting device according to  claim 3 , wherein
 the electron-injection layer is made of LiF, Li 2 O, Liq, MgO, or CaF 2  and has a thickness of 0.5 to 2 nm.   
   
   
       5 . A light-emitting device comprising:
 a light-reflecting layer;   a transparent first electrode disposed on or above the light-reflecting layer;   a semi-transparent reflective second electrode;   a light-emitting function layer disposed between the first electrode and the second electrode;   an electron-injection layer disposed between the light-emitting function layer and the second electrode;   a first layer disposed on the second electrode for absorbing stress to the second electrode; and   a second layer made of an inorganic material disposed on the first layer for absorbing stress, wherein   the second electrode is made of an alloy in which any of Mg, Cu, Zn, Pd, Nd, and Al is mixed with Ag at an atomic number ratio in the range of 1:3 to 1:50.   
   
   
       6 . The light-emitting device according to  claim 5 , wherein
 the second electrode has a thickness in a range of 10 to 30 nm.   
   
   
       7 . The light-emitting device according to  claim 6 , wherein
 the first layer is made of a material having a work function of 4.2 eV or more and being other than Ag.   
   
   
       8 . The light-emitting device according to  claim 7 , wherein
 the first layer is made of Zn, Al, Au, SnO 2 , ZnO 2 , or SiO,   
   
   
       9 . The light-emitting device according to  claim 6 , wherein
 the light-emitting function layer includes an electron-injection layer; and   the first layer is made of the same material as that of the electron-injection layer.   
   
   
       10 . The light-emitting device according to  claim 9 , wherein
 the first layer is made of LiF, Li 2 O, Liq, MgO, MgF 2 , CaF 2 , SrF 2 , NaF, or WF.   
   
   
       11 . A light-emitting device comprising:
 a light-reflecting layer;   a transparent first electrode disposed on or above the light-reflecting layer;   a semi-transparent reflective second electrode;   a light-emitting function layer disposed between the first electrode and the second electrode;   an electron-injection layer disposed between the light-emitting function layer and the second electrode;   a reduction layer disposed between the electron-injection layer and the second electrode and made of a reducible metal material for reducing an electron-injecting material forming the electron-injection layer;   a first layer disposed on the second electrode and absorbing stress to the second electrode; and   a second layer of an inorganic material disposed on the first layer, wherein   the second electrode is made of Ag.   
   
   
       12 . A light-emitting device comprising:
 a light-reflecting layer;   a transparent first electrode disposed on or above the light-reflecting layer;   a semi-transparent reflective second electrode;   a light-emitting function layer disposed between the first electrode and the second electrode;   a mixture layer disposed between the light-emitting function layer and the second electrode and made of a mixture of an electron-injecting material and a reducible metal material for reducing the electron-injecting material;   a first layer disposed on the second electrode and absorbing stress to the second electrode; and   a second layer of an inorganic material disposed on the first layer, wherein   the second electrode is made of Ag,   
   
   
       13 . The light-emitting device according to  claim 11 , wherein
 the first layer is made of an electron-injecting material.   
   
   
       14 . The light-emitting device according to  claim 13 , wherein
 the first layer is made of LiF, Li 2 O, Liq, MgO, CaF 2 , SrF 2 , NaF, or WF.   
   
   
       15 . The light-emitting device according to  claim 11 , wherein
 the first layer is made of LiF; and   the reducible metal material is Al.   
   
   
       16 . A light-emitting device comprising:
 a plurality of light-emitting elements each including a first electrode, a second electrode, and a light-emitting layer disposed between the first electrode and the second electrode;   a wall separating the plurality of light-emitting elements;   a first layer partially covering the second electrodes and easing the concentration of stress to the second electrodes; and   a second layer of an inorganic material disposed on the first layer, wherein   the second electrode covers the light-emitting layer in each of the plurality of light-emitting elements and covers the wall separating the plurality of light-emitting elements.   
   
   
       17 . The light-emitting device according to  claim 16 , wherein
 the first layer has openings at positions corresponding to the light-emitting elements.   
   
   
       18 . The light-emitting device according to  claim 16 , wherein
 the first layer is not provided at at least part of a region where the wall and the second electrode overlap each other, and an auxiliary electrode is disposed at at least part of the region.   
   
   
       19 . Electronic equipment including the light-emitting device according to  claim 1 .