US2010051966A1PendingUtilityA1

Methods of Making Semiconductor-Based Electronic Devices on a Wire and Articles That Can Be Made Using Such Devices

Individually held — no corporate assignee on recordPriority: Oct 16, 2006Filed: Nov 13, 2009Published: Mar 4, 2010
Est. expiryOct 16, 2026(~0.2 yrs left)· nominal 20-yr term from priority
H10D 86/0214H10D 86/60H10D 86/40H10D 30/6758H10D 30/0323H10D 30/6728
50
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Claims

Abstract

Strands of active electronic devices (AEDs), such as FETs, are made by first completely or partially forming a plurality of the AEDs on a precursor substrate. Then, one or more elongate conductors (e.g., wires) are secured to ones of the AEDs so as to electrically connected the AEDs together. After securing the conductor(s) to corresponding respective ones of the AEDs, the connected ones of the AEDs and their respective conductor(s) is/are liberated as one or more composite members from the precursor substrate by removing material from the substrate. Each of the composite substrates is further processed as needed to complete an AED strand.

Claims

exact text as granted — not AI-modified
1 . An electronic circuit, comprising:
 a first field-effect transistor (FET) strand comprising a first prefabricated elongate conductor and a first FET that includes a first source secured to said first prefabricated elongate conductor, said first FET further including a first drain; and   a second FET strand comprising a second prefabricated elongate conductor and a second FET that includes a second source secured to said second prefabricated elongate conductor, said second FET further including a gate electrically connected to said first drain of said first FET.   
   
   
       2 . The electronic circuit of  claim 1 , wherein said first FET has a first channel length extending in a first direction and said second FET has a second channel length extending in a second direction substantially perpendicular to said first direction. 
   
   
       3 . The electronic circuit of  claim 1 , wherein said first FET has a first gate oxide layer and said second FET has a second gate oxide layer spaced from said first gate oxide layer in a direction perpendicular to said first gate oxide layer. 
   
   
       4 . The electronic circuit of  claim 1 , wherein said second FET includes a second drain and the electronic circuit further comprises a light-emitting diode (LED) electrically connected to said second drain so that said second FET drives said LED during use.

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