Method for forming an electronic device in multi-layer structure

Abstract

A method for forming an organic or partly organic switching device, comprising: depositing layers of conducting, semiconducting and/or insulating layers by solution processing and direct printing; defining microgrooves in the multilayer structure by solid state embossing; and forming a switching device inside the microgroove.

1 .- 93 . (canceled) 
     
     
         94 . A method for forming an electronic or optical device in a multilayer structure comprising:
 forming a first layer having a topographic profile;   depositing at least one conformal layer on top of said first layer; and   using said topographic profile to control deposition of material on the at least one conformal layer.   
     
     
         95 . A method as in  claim 94 , wherein the first layer defines one or more electrodes of a transistor. 
     
     
         96 . A method as in  claim 95 , wherein the material on the at least one conformal layer defines one or more electrodes of said transistor. 
     
     
         97 . A method as in  claim 94 , wherein the material on the at least one conformal layer defines a gate electrode of a transistor, and the first layer defines source and drain electrodes of said transistor. 
     
     
         98 . A method as in  claim 94 , which further comprises modifying the surface energy of the topmost surface of the at least one conformal layer in one or more raised region of the topographic profile. 
     
     
         99 . A method as in  claim 98 , wherein the surface modifying is comprises bringing a stamp that has been exposed to a self-assembled monolayer into contact with the topmost surface of the at least one conformal layer. 
     
     
         100 . A method for forming an electronic or optical device on a substrate comprising:
 (a) forming at least one recess structure on the substrate; and   (b) depositing material on top of the substrate whereby the deposition of material is confined to the recess structure and/or a region adjacent the recess structure.   
     
     
         101 . A method as in  claim 100 , wherein said recess structure is formed by micro cutting. 
     
     
         102 . A method as in  claim 100 , which comprises the additional step of modifying the surface energy of the surface layer of the substrate in at least part of the region adjacent to the recess without modifying the surface energy in at least part of the recess structure. 
     
     
         103 . A method as in  claim 102 , wherein the step of surface modifying is such as to reduce the capacity of the material of the surface layer of the substrate to be wetted in the said region by the deposited material. 
     
     
         104 . A method as in  claim 102 , wherein said additional step of modifying the surface energy of the substrate is performed by bringing the substrate in contact with a surface modifying agent, in such a way that no contact is established in at least part of the recess structure. 
     
     
         105 . A method as in  claim 100 , wherein the substrate contains at least one buried layer with a different free surface energy from that of the surface layer of the substrate wherein the step of microcutting exposes at least part of the buried layer in the recess. 
     
     
         106 . A method as in  claim 105 , wherein the said exposed buried layer enhances the affinity of the deposited material to be confined to the recess structure. 
     
     
         107 . A method as claimed in  claim 102 , wherein the surface modification is performed by directing material towards the substrate at an acute angle to the upper surface of the substrate. 
     
     
         108 . An electronic device formed by a method according to  claim 100 . 
     
     
         109 . An electronic switching device formed by a method according to  claim 100 . 
     
     
         110 . A transistor device formed by a method according to  claim 100 . 
     
     
         111 . A light emitting device formed by a method according to  claim 100 . 
     
     
         112 . A lasing device formed by a method according to  claim 100 . 
     
     
         113 . An electronic switching device formed in a multilayer structure comprising the following elements:
 a first and a second electrically conductive layer;   a first electrically insulating or semiconductive layer in between the two electrically conductive layers;   a recess structure cutting through at least one of the electrically conductive and the first electrically insulating or semiconductive layer;   at least one further electrically insulating or semiconductive layers deposited into the recess structure in contact with the two electrically conductive materials; and   a third electrically conductive layer on top of the further electrically insulating or semiconductive layer deposited into the recess structure.   
     
     
         114 . An electronic switching device as in  claim 113 , in which the third electrically conductive layer is deposited in such a way that the material is attracted by the recess structure and the material of the third conductive layer is confined to the recess structure and/or the region adjacent to the recess structure so as to reduce the electrical capacitance between the third electrically conductive layer and the first and second electrically conductive layers. 
     
     
         115 . A logic circuit, display or memory device comprising a plurality of devices as claimed in  claim 113 . 
     
     
         116 . A logic circuit as claimed in  claim 115 , wherein the said devices are formed on a common substrate. 
     
     
         117 . A logic circuit as claimed in  claim 115 , wherein the said devices are formed in a common layer of an organic material.