Transient liquid phase eutectic bonding

Abstract

A structure including a first structural component, a second structural component and a bonding structure bonding the first and second structural components together, where the bonding structure contains a hypoeutectic solid solution alloy. The hypoeutectic solid solution alloy may be a gold-germanium solid solution alloy, a gold-silicon solid solution alloy or a gold-tin solid solution alloy.

1 . A structure comprising:
 a first structural component;   a second structural component; and   a bonding structure bonding said first and second structural components together, said bonding structure comprising a hypoeutectic gold-germanium solid solution alloy, a hypoeutectic gold-silicon solid solution alloy, or a hypoeutectic gold-tin solid solution alloy.   
     
     
         2 . The structure of  claim 1  wherein said bonding structure has a melting temperature of at least about 450° C. 
     
     
         3 . The structure of  claim 1  wherein said bonding structure contains at least about 97 atomic percent gold. 
     
     
         4 . The structure of  claim 1  wherein said first and second components are silicon wafers or portions of silicon wafers. 
     
     
         5 . The structure of  claim 1  wherein at least one of said first and second structural components is a ceramic material. 
     
     
         6 . The structure of  claim 1  wherein said bonding structure has a generally uniform composition. 
     
     
         7 . The structure of  claim 1  wherein said bonding structure has a melting temperature of at least about 1000° C. 
     
     
         8 . The structure of  claim 1  further comprising a spacer located between said first and second structural component, wherein said spacer contacts both said first and second structural components to limit the movement of said first and second components toward each other. 
     
     
         9 . The structure of  claim 8  wherein said containment well is lined with a dielectric material. 
     
     
         10 . The structure of  claim 1  wherein at least one of said first or second components includes at least one containment well shaped and configured to receive and retain a liquid therein. 
     
     
         11 . A structure comprising:
 a first structural component;   a second structural component; and   a bonding structure bonding said first and second structural components together, said bonding structure being a solid solution alloy having a eutectic point temperature of less than about 400° C. and a melting temperature of greater than about 600° C.   
     
     
         12 . The structure of  claim 11  wherein said solid solution alloy is a gold-germanium alloy, or a gold-silicon alloy, or a gold-tin alloy. 
     
     
         13 . The structure of  claim 11  wherein said bonding structure contains at least about 97 atomic percent gold. 
     
     
         14 . The structure of  claim 11  wherein said first and second components are silicon wafers or portions of silicon wafers. 
     
     
         15 . The structure of  claim 11  wherein said bonding structure has a melting temperature of greater at least about 1000° C. 
     
     
         16 . The structure of  claim 11  further comprising a spacer located between said first and second structural component, wherein said spacer contacts both said first and second structural components to limit the movement of said first and second components toward each other.