Advanced quad flat non-leaded package structure and manufacturing method thereof

Abstract

An advanced quad flat non-leaded package structure includes a carrier, a chip and a molding compound. The carrier includes a die pad and a plurality of leads. The die pad has a central portion, a peripheral portion disposed around the central portion and a plurality of connecting portions connecting the central portion and the peripheral portion. The central portion, the peripheral portion, and the connecting portions define at least two hollow regions. The leads are disposed around the die pad. The chip is located within the central portion of the die pad and electrically connected to the leads via a plurality of wires. The molding compound encapsulates the chip, the wires, inner leads and a portion of the carrier.

1 . An advanced quad flat non-leaded package structure, comprising:
 a carrier, having an upper surface, wherein the carrier comprises:
 a die pad, having a central portion, a peripheral portion and a plurality of connecting portions, wherein the peripheral portion is disposed around the central portion, the connecting portions connect the central portion and the peripheral portion, the connecting portions are separated from one another, and the central portion, the peripheral portion, and the connecting portions define at least two hollow regions; and 
 a plurality of leads, disposed around the die pad, wherein each of the leads includes an inner lead disposed over the upper surface and an outer lead disposed over the lower surface; and 
   a chip, disposed on the upper surface of the carrier and located within the central portion of the die pad, wherein the chip is electrically connected to the inner leads via a plurality of wires; and   a molding compound, encapsulating the chip, the wires, the inner leads, and a portion of the carrier.   
   
   
       2 . The advanced quad flat non-leaded package structure as claimed in  claim 1 , wherein the peripheral portion of the die pad functions as a ground ring, wherein the peripheral portion of the die pad is electrically connected to the chip via the wires. 
   
   
       3 . The advanced quad flat non-leaded package structure as claimed in  claim 2 , wherein the carrier further comprises at least a power ring, wherein the power ring is disposed between the leads and the peripheral portion of the die pad and electrically connected to the chip via wires, and the power ring is electrically isolated from the ground ring. 
   
   
       4 . The advanced quad flat non-leaded package structure as claimed in  claim 1 , further comprises an adhesive layer disposed between the chip and the central portion of the die pad. 
   
   
       5 . The advanced quad flat non-leaded package structure as claimed in  claim 1 , wherein the central portion of the die pad has a polygonal shape. 
   
   
       6 . The advanced quad flat non-leaded package structure as claimed in  claim 5 , wherein the peripheral portion is connected to at least a side of the central portion through the connecting portions. 
   
   
       7 . The advanced quad flat non-leaded package structure as claimed in  claim 5 , wherein the peripheral portion is connected to at least a corner of the central portion through the connecting portions. 
   
   
       8 . The advanced quad flat non-leaded package structure as claimed in  claim 1 , wherein a material of the leads comprises gold or palladium. 
   
   
       9 . The advanced quad flat non-leaded package structure as claimed in  claim 1 , wherein a distance between any two adjacent leads is greater than or equal to 400 micrometers. 
   
   
       10 . The advanced quad flat non-leaded package structure as claimed in  claim 1 , wherein a bottom surface of the central portion is coplanar with that of the peripheral portion, an upper surface of the central portion is not coplanar with that of the peripheral portion. 
   
   
       11 . The advanced quad flat non-leaded package structure as claimed in  claim 1 , wherein a distance between an edge of the chip and an edge of the central portion is greater than or equal to 300 micrometers. 
   
   
       12 . A manufacturing method of an advanced quad flat non-leaded package structure, comprising:
 providing a carrier having a first patterned metal layer formed on an upper surface of the carrier, and a second patterned metal layer formed on a lower surface of the carrier, wherein the carrier includes at least an accommodating cavity and a plurality of first openings;   providing a chip, wherein the chip is disposed on a central portion of the accommodating cavity and electrically connected to the first patterned metal layer of the carrier via a plurality of wires;   forming a molding compound to encapsulate the chip, the wires, the first patterned metal layer of the carrier, and fill the accommodating cavity and the first openings; and   performing an etching process to the lower surface of the carrier using the second patterned metal layer as a mask, so that the carrier is etched through to expose the molding compound filled inside the first openings and simultaneously form a plurality of second openings and a plurality of third openings.   
   
   
       13 . The manufacturing method of the advanced quad flat non-leaded package structure as claimed in  claim 12 , wherein the carrier is defined into a plurality of leads and a die pad by the second openings following the etching process. 
   
   
       14 . The manufacturing method of the advanced quad flat non-leaded package structure as claimed in  claim 13 , wherein the die pad is simultaneously defined into the central portion, a peripheral portion and a plurality of connecting portions by the third openings. 
   
   
       15 . The manufacturing method of the advanced quad flat non-leaded package structure as claimed in  claim 12 , wherein before the chip is provided, the method further comprises forming an adhesive layer on the central portion of the accommodating cavity.