Cmos image sensor and method of fabricating the same

Abstract

A CMOS image sensor is disclosed. The image sensor includes a plurality of polysilicon patterns provided on a silicon epitaxial layer which correspond to the location of a plurality of photodiodes provided in a dummy pixel area, a silicide layer of metal with a high melting point provided on the plurality of the polysilicon patterns, a device protecting layer and a planarization layer provided on the silicon epitaxial layer and silicide layer, and a plurality of microlenses on the planarization layer which correspond to the location of the silicide layer.

1 . A CMOS image sensor comprising:
 a plurality of polysilicon patterns provided on a silicon epitaxial layer which correspond to the location of a plurality of photodiodes provided in a dummy pixel area;   a silicide layer of metal with a high melting point provided on the plurality of the polysilicon patterns;   a device protecting layer and a planarization layer which are sequentially provided on the silicon epitaxial layer and silicide layer; and   a plurality of microlenses on the planarization layer which correspond to the location of the silicide layer.   
   
   
       2 . The CMOS image sensor of  claim 1 , wherein the silicide layer of the high melting point metal comprises a cobalt silicide layer. 
   
   
       3 . The CMOS image sensor of  claim 1 , wherein the device protecting layer is provided using undoped silicate glass. 
   
   
       4 . The CMOS image sensor of  claim 1 , wherein the planarization layer is provided using spin on glass.