Method for forming a semiconductor device and structure thereof

Abstract

A non-planar semiconductor device ( 10 ) starts with a silicon fin ( 42 ). A source of germanium (e.g. 24, 26, 28, 30, 32 ) is provided to the fin ( 42 ). Some embodiments may use deposition to provide germanium; some embodiments may use ion implantation ( 30 ) to provide germanium; other methods may also be used to provide germanium. The fin ( 42 ) is then oxidized to form a silicon germanium channel region in the fin ( 36 ). In some embodiments, the entire fin ( 42 ) is transformed from silicon to silicon germanium. One or more fins ( 36 ) may be used to form a non-planar semiconductor device, such as, for example, a FINFET, MIGFET, Tri-gate transistor, or multi-gate transistor.

1 - 17 . (canceled) 
     
     
         18 . A non-planar semiconductor device, comprising:
 a fin in which a channel region is formed, said fin comprising silicon germanium;   a first current electrode, coupled to said fin, said first current electrode comprising a first region and a second region, wherein the first region comprises silicon germanium and the second region comprises silicon and not germanium; and   a second current electrode, coupled to said fin, said second current electrode comprising a first region and a second region, wherein the first region comprises silicon germanium and the second region comprises silicon and not germanium.   
     
     
         19 . A non-planar semiconductor device as in  claim 18 , wherein the fin, the first region of the first current electrode, and the first region of the second current electrode are contiguous. 
     
     
         20 . A non-planar semiconductor device as in  claim 18 , wherein the first region of the first current electrode is formed on the outside walls of the second region of the first current electrode, and wherein the first region of the second current electrode is formed on the outside walls of the second region of the second current electrode. 
     
     
         21 . A non-planar semiconductor device, comprising:
 a fin in which a channel region is formed, the fin comprises silicon and comprises germanium;   a first current electrode of the non-planar semiconductor device, wherein the first current electrode is coupled to the fin, wherein the first current electrode comprises silicon, wherein the first current electrode comprises an inner region and an outer region, wherein the outer region of the first electrode comprises germanium but the inner region of the first electrode does not comprise germanium; and   a second current electrode of the non-planar semiconductor device, wherein the second current electrode is coupled to the fin, wherein the second current electrode comprises silicon, wherein the second current electrode comprises an inner region and an outer region, wherein the outer region of the second current electrode comprises germanium but the inner region of the second electrode does not comprise germanium.   
     
     
         22 . A non-planar semiconductor device as in  claim 21 , wherein said fin comprises sidewalls, and wherein the sidewalls comprise a layer of silicon germanium. 
     
     
         23 . A non-planar semiconductor device as in  claim 22 , wherein the layer of silicon germanium is selectively deposited. 
     
     
         24 . A non-planar semiconductor device, comprising:
 a fin in which a channel region is formed, the fin comprises silicon and comprises germanium;   a first current electrode of the non-planar semiconductor device, wherein the first current electrode is coupled to the fin, wherein the first current electrode comprises silicon, wherein the first current electrode comprises an inner region and an outer region, wherein the outer region of the first electrode comprises germanium but the inner region of the first electrode does not comprise germanium; and   a second current electrode of the non-planar semiconductor device, wherein the second current electrode is coupled to the fin, wherein the second current electrode comprises silicon, wherein the second current electrode comprises an inner region and an outer region, wherein the outer region of the second current electrode comprises germanium but the inner region of the second electrode does not comprise germanium.   
     
     
         25 . A non-planar semiconductor device as in  claim 24 , wherein the fin is implanted with germanium using an implant angle in a range of 30 degrees to 10 degrees. 
     
     
         26 . A non-planar semiconductor device as in  claim 24 , wherein the fin is implanted using a germanium atom dose in a range of 5×10e13 to 5×10e16. 
     
     
         27 . A non-planar semiconductor device as in  claim 24 , wherein the fin is implanted using a germanium atom dose in a range of 1 keV to 120 keV. 
     
     
         28 . A non-planar semiconductor device as in  claim 24 , wherein the fin comprises sidewalls, and wherein the sidewalls comprise a silicon germanium layer. 
     
     
         29 . A non-planar semiconductor device as in  claim 24 , further comprising:
 an insulating layer overlying at least a portion of the fin.   
     
     
         30 . A non-planar semiconductor device as in  claim 24 , wherein the non-planar semiconductor device is formed in a wafer portion comprising a first insulating layer overlying a substrate, a monocrystalline semiconductor layer overlying the first insulating layer, and a second insulating layer overlying the monocrystalline semiconductor layer. 
     
     
         31 . A non-planar semiconductor device as in  claim 24 , wherein the channel region comprises all of the fin. 
     
     
         32 . A non-planar semiconductor device as in  claim 24 , wherein the non-planar semiconductor device comprises a FINFET. 
     
     
         33 . A non-planar semiconductor device as in  claim 24 , wherein the non-planar semiconductor device comprises a MIGFET. 
     
     
         34 . A non-planar semiconductor device as in  claim 24 , wherein the non-planar semiconductor device comprises a Tri-gate transistor. 
     
     
         35 . A non-planar semiconductor device, comprising:
 a fin in which a channel region is formed, the fin comprises silicon germanium;   a first current electrode of the non-planar semiconductor device, wherein the first current electrode is coupled to the fin, wherein the first current electrode comprises silicon, wherein the first current electrode comprises an inner region and an outer region, wherein the outer region of the first electrode comprises germanium but the inner region of the first electrode does not comprise germanium; and   a second current electrode of the non-planar semiconductor device, wherein the second current electrode is coupled to the fin, wherein the second current electrode comprises silicon, wherein the second current electrode comprises an inner region and an outer region, wherein the outer region of the second current electrode comprises germanium but the inner region of the second electrode does not comprise germanium,   wherein the non-planar semiconductor device is formed using a wafer portion comprising a first insulating layer overlying a substrate, a monocrystalline semiconductor layer overlying the first insulating layer, and a second insulating layer overlying the monocrystalline semiconductor layer.