Method and Apparatus of Growing Silicon Single Crystal and Silicon Wafer Fabricated Thereby

Abstract

Disclosed is a method of fabrication of high quality silicon single crystal at high growth rate. The method grows silicon single crystal from silicon melt by Czochralski method, wherein the silicon single crystal is grown according to conditions that the silicon melt has an axial temperature gradient determined according to an equation, {(ΔTmax−ΔTmin)/ΔTmin}×100≦10, wherein ΔTmax is a maximum axial temperature gradient of the silicon melt and ΔTmin is a minimum axial temperature gradient of the silicon melt, when the axial temperature gradient is measured along an axis parallel to a radial direction of the silicon single crystal.

1 . A silicon wafer manufactured from silicon single crystal grown by Czochralski method, wherein a balanced region where interstitial concentration is balanced with vacancy concentration occupies at least 10% of the area of the wafer. 
     
     
         2 . A silicon wafer manufactured from silicon single crystal grown by Czochralski method, wherein an interstitial dominant region and a vacancy dominant region are arranged substantially asymmetric about the center. 
     
     
         3 . A silicon wafer manufactured from silicon single crystal grown by Czochralski method, wherein point defect concentration is the same as or less than critical saturation concentration of vacancies that is a minimum vacancy concentration allowing the formation of micro precipitates in heat treatment. 
     
     
         4 . The silicon wafer according to  claim 3 , wherein the heat treatment comprises first heat treatment at 700 to 800° C. for 5 to 7 hours and second heat treatment at 1000 to 1100° C. for 14 to 18 hours. 
     
     
         5 . The silicon wafer according to  claim 3 , wherein the micro precipitates are formed inside the wafer at least 1 μm deep from the surface of the wafer, and sized 0.3 m or less. 
     
     
         6 . The silicon wafer according to  claim 3 , wherein the point defect concentration is 10 10 ˜10 12 /cm 3 . 
     
     
         7 . The silicon wafer according to  claim 3 , wherein an interstitial dominant region is a central portion of the wafer, and a vacancy dominant region is in a periphery of the wafer. 
     
     
         8 . The silicon wafer according to  claim 3 , wherein the point defect concentration is uniform so that a difference between a maximum point defect concentration (Cmax) and a minimum point defect concentration (Cmin) is 10% or less of the minimum point defect concentration (Cmin) in a region up to 90% of the radius from the center of the silicon wafer. 
     
     
         9 . A silicon single crystal ingot grown by Czochralski method, wherein point defect concentration is 10 10 ˜10 12 /cm 3 . 
     
     
         10 . The silicon single crystal ingot according to  claim 9 , wherein an interstitial dominant region is a central portion of the silicon single crystal, and a vacancy dominant region is in a periphery of the silicon single crystal. 
     
     
         11 . The silicon single crystal ingot according to  claim 9 , wherein the point defect concentration is uniform so that a difference between a maximum point defect concentration (Cmax) and a minimum point defect concentration (Cmin) is 10% or less of the minimum point defect concentration (Cmin) in a region up to 90% of the radius from the center of the silicon single crystal. 
     
     
         12 . The silicon single crystal ingot according to  claim 11 , wherein the interstitial dominant region and the vacancy dominant region are substantially asymmetric about the center.