Semiconductor device fabricating method, and semiconductor fabricating device

Abstract

A method for fabricating a semiconductor device includes: supporting a semiconductor substrate formed with a polishing target film by a polishing head; and polishing the polishing target film while restricting movement in a radial direction of the semiconductor substrate by a retainer formed on the polishing head with a tilted surface formed on an inner peripheral section of the retainer, wherein when the polishing target film is polished, an outer peripheral surface of the semiconductor substrate comes into contact with the tilted surface formed on the inner peripheral section of the retainer.

1 . A method for fabricating a semiconductor device, comprising:
 supporting a semiconductor substrate formed with a polishing target film by a polishing head; and   polishing the polishing target film while restricting movement in the radial direction of the semiconductor substrate by a retainer formed on the polishing head with a tilted surface formed on an inner peripheral section of the retainer, wherein   when the polishing target film is polished, an outer peripheral surface of the semiconductor substrate comes into contact with the tilted surface formed on the inner peripheral section of the retainer.   
     
     
         2 . The method according to  claim 1 , wherein
 the tilted surface has a tilt angle of 10 to 40 degrees with respect to the normal direction of the lower surface of the polishing head.   
     
     
         3 . The method according to  claim 2 , wherein
 the tilted surface has the tilt angle of 15 to 35 degrees with respect to the normal direction of the lower surface of the polishing head.   
     
     
         4 . A semiconductor device, comprising:
 a polishing head that supports a semiconductor substrate formed with a polishing target film; and   a retainer, that is provided on the polishing head, with a tilted surface on an inner peripheral section to restrict movement of the semiconductor substrate in the radial direction, wherein   when the polishing target film is polished, an outer peripheral surface of the semiconductor substrate comes into contact with the tilted surface formed on the inner peripheral section of the retainer.   
     
     
         5 . The semiconductor device according to  claim 4 , wherein
 the tilted surface has a tilt angle of 10 to 40 degrees with respect to the normal direction of the lower surface of the polishing head.   
     
     
         6 . The semiconductor device according to  claim 5 , wherein
 the tilted surface has the tilt angle of 15 to 35 degrees with respect to the normal direction of the lower surface of the polishing head.   
     
     
         7 . A semiconductor device, comprising:
 a polishing head that supports a semiconductor substrate formed with a polishing target film; and   a retainer that is provided on the polishing head with a member, having a hardness higher than the semiconductor substrate, on an inner peripheral section to restrict movement of the semiconductor substrate in the radial direction, wherein   when the polishing target film is polished, an outer peripheral surface of the semiconductor substrate comes into contact with the member formed on the inner peripheral section of the retainer.   
     
     
         8 . The semiconductor device according to  claim 7 , wherein
 the member having the hardness higher than the semiconductor substrate includes titanium.