Substrate processing apparatus and method of manufacturing semiconductor device

Abstract

A substrate processing apparatus includes: a reaction tube configured to process a plurality of substrates; a heater configured to heat the inside of the reaction tube; a holder configured to arrange and hold the plurality of substrates within the reaction tube; a first nozzle disposed in an area corresponding to a substrate arrangement area where the plurality of substrates are arranged, and configured to supply hydrogen-containing gas from a plurality of locations of the area into the reaction tube; a second nozzle disposed in the area corresponding to the substrate arrangement area, and configured to supply oxygen-containing gas from a plurality of locations of the area into the reaction tube; an exhaust outlet configured to exhaust the inside of the reaction tube; and a pressure controller configured to control pressure inside the reaction tube to be lower than atmospheric pressure, wherein the first nozzle is provided with a plurality of first gas ejection holes, and the second nozzle is provided with as many second gas ejection holes as at least the plurality of substrates so that the second gas ejection holes correspond to at least the respective substrates.

1 . A substrate processing apparatus comprising:
 a reaction tube configured to process a plurality of substrates;   a heater configured to heat the inside of the reaction tube;   a holder configured to arrange and hold the plurality of substrates within the reaction tube;   a first nozzle disposed in an area corresponding to a substrate arrangement area where the plurality of substrates are arranged, and configured to supply hydrogen-containing gas from a plurality of locations of the area into the reaction tube;   a second nozzle disposed in the area corresponding to the substrate arrangement area, and configured to supply oxygen-containing gas from a plurality of locations of the area into the reaction tube;   an exhaust outlet configured to exhaust the inside of the reaction tube; and   a pressure controller configured to control pressure inside the reaction tube to be lower than atmospheric pressure,   wherein the first nozzle is provided with a plurality of first gas ejection holes, and the second nozzle is provided with as many second gas ejection holes as at least the plurality of substrates so that the second gas ejection holes correspond to at least the respective substrates.   
   
   
       2 . The substrate processing apparatus according to  claim 1 , wherein the second gas ejection holes are configured to eject oxygen-containing gas to the respective substrates at a uniform flow rate. 
   
   
       3 . The substrate processing apparatus according to  claim 1 , wherein the respective second gas ejection holes and the respective substrates corresponding to the second gas ejection holes are configured at regular distances in a substrate arrangement direction. 
   
   
       4 . The substrate processing apparatus according to  claim 1 , wherein an arrangement pitch of the second gas ejection holes is equal to an arrangement pitch of the substrates. 
   
   
       5 . The substrate processing apparatus according to  claim 1 , wherein the number of the first gas ejection holes is smaller than the number of the second gas ejection holes. 
   
   
       6 . The substrate processing apparatus according to  claim 1 , wherein the first gas ejection holes are installed as many as at least the plurality of substrates so that the first gas ejection holes are in 1:1 correspondence with the plurality of substrates. 
   
   
       7 . The substrate processing apparatus according to  claim 6 , wherein an arrangement pitch of the first gas ejection holes is equal to an arrangement pitch of the substrates. 
   
   
       8 . The substrate processing apparatus according to  claim 6 , wherein the respective first gas ejection holes and the respective substrates corresponding to the first gas ejection holes are configured at regular distances in a substrate arrangement direction. 
   
   
       9 . The substrate processing apparatus according to  claim 6 , wherein the number of the first gas ejection holes is equal to the number of the second gas ejection holes. 
   
   
       10 . The substrate processing apparatus according to  claim 6 , wherein the first gas ejection holes are in 1:1 correspondence with the second gas ejection holes. 
   
   
       11 . A method of manufacturing a semiconductor device, comprising:
 loading a plurality of substrates into a reaction tube;   processing the plurality of substrates by supplying hydrogen-containing gas and oxygen-containing gas into the reaction tube, which is in a heated state, with pressure inside the reaction tube being lower than atmospheric pressure, respectively through a first nozzle and a second nozzle disposed in an area corresponding to a substrate arrangement area where the plurality of substrates are arranged; and   unloading the plurality of processed substrates from the reaction tube,   wherein when the substrates are processed, the hydrogen-containing gas is supplied into the reaction tube from a plurality of locations of the area corresponding to the substrate arrangement area through a plurality of first gas ejection holes installed in the first nozzle and, at the same time, the oxygen-containing gas is supplied into the reaction tube from a plurality of locations of the area corresponding to the substrate arrangement area through second gas ejection holes installed as many as at least the plurality of substrates in the second nozzle so that the second gas ejection holes are in 1:1 correspondence with at least the plurality of substrates.