Semiconductor Device and Fabrication Method Thereof

Abstract

A hydrogenation method that utilizes plasma directly exposes a crystalline semiconductor film to the plasma, and therefore involves the problem that the crystalline semiconductor film is damaged by the ions generated simultaneously in the plasma. If a substrate is heated to 400° C. or above to recover this damage, hydrogen is re-emitted from the crystalline semiconductor film. To solve these problems, a method of fabricating a semiconductor device according to the present invention comprises the steps of forming a hydrogen-containing first insulating film on a semiconductor layer formed into a predetermined shape, conducting heat-treatment in a hydrogen atmosphere or in an atmosphere containing hydrogen formed by plasma generation, forming a second insulating film in contact with the first insulating film, conducting heat-treatment in a hydrogen atmosphere or in an atmosphere containing hydrogen formed by plasma generation, forming a hydrogen-containing third insulating film on the second insulating film and conducting heat-treatment in an atmosphere containing hydrogen or nitrogen.

1 - 32 . (canceled) 
   
   
       33 . A method for manufacturing a semiconductor device comprising:
 forming a semiconductor island over a substrate;   forming a gate insulating film over the semiconductor island;   forming a gate electrode comprising a tantalum nitride film over the gate insulating film;   forming a first insulating film containing hydrogen over the gate insulating film and the gate electrode; and   heating the first insulating film.   
   
   
       34 . The method according to  claim 33 , wherein the first insulating film formed over the gate insulating film and the gate electrode has a hydrogen concentration of 1 to 30 atomic %. 
   
   
       35 . The method according to  claim 33 , wherein the first insulating film formed over the gate insulating film and the gate electrode is heated in a hydrogen atmosphere. 
   
   
       36 . The method according to  claim 33  further comprising:
 forming a second insulating film over the first insulating film.   
   
   
       37 . A method for manufacturing a semiconductor device comprising:
 forming a semiconductor island over a substrate;   forming a gate insulating film over the semiconductor island;   forming a gate electrode comprising a tantalum nitride film over the gate insulating film;   forming a silicon nitride oxide film over the gate insulating film and the gate electrode; and   heating the silicon nitride oxide film.   
   
   
       38 . The method according to  claim 37 , wherein the silicon nitride oxide film formed over the gate insulating film and the gate electrode is heated in a hydrogen atmosphere. 
   
   
       39 . The method according to  claim 37  further comprising:
 forming an insulating film over the silicon nitride oxide film.   
   
   
       40 . A method for manufacturing a semiconductor device comprising:
 forming a semiconductor island over a substrate;   forming a gate insulating film over the semiconductor island;   forming a gate electrode comprising a tantalum nitride film over the gate insulating film;   forming a silicon nitride oxide film containing hydrogen over the gate insulating film and the gate electrode; and   heating the silicon nitride oxide film.   
   
   
       41 . The method according to  claim 40 , wherein the silicon nitride oxide film formed over the gate insulating film and the gate electrode has a hydrogen concentration of 1 to 30 atomic %. 
   
   
       42 . The method according to  claim 40 , wherein the silicon nitride oxide film formed over the gate insulating film and the gate electrode is heated in a hydrogen atmosphere. 
   
   
       43 . The method according to  claim 40  further comprising:
 forming an insulating film over the silicon nitride oxide film.