Susceptor, vapor phase growth apparatus, and method of manufacturing epitaxial wafer

Abstract

An aspect of the present invention relates to a susceptor comprising a counterbored groove receiving a semiconductor wafer in the course of manufacturing an epitaxial wafer by vapor phase growing an epitaxial layer on a surface of the semiconductor wafer, wherein a lateral wall of the counterbored groove is comprised of at least one flat portion and at least one protruding portion being higher than the flat portion, and a height of the flat portion is equal to or greater than a thickness of the semiconductor wafer.

1 . A susceptor comprising:
 a counterbored groove receiving a semiconductor wafer in the course of manufacturing an epitaxial wafer by vapor phase growing an epitaxial layer on a surface of the semiconductor wafer, wherein a lateral wall of the counterbored groove is comprised of at least one flat portion and at least one protruding portion being higher than the flat portion, and a height of the flat portion is equal to or greater than a thickness of the semiconductor wafer.   
     
     
         2 . The susceptor according to  claim 1 , wherein the height of the flat portion is about 1.0 to 2.0 times greater than the thickness of the semiconductor wafer. 
     
     
         3 . The susceptor according to  claim 1 , wherein a difference in height between the highest portion of the protruding portion and an upper surface of the flat portion ranges from about 0.1 to 5 mm. 
     
     
         4 . A vapor phase growth apparatus comprising:
 the susceptor according to  claim 1 ; and   a reaction chamber housing the susceptor.   
     
     
         5 . A method of manufacturing an epitaxial wafer by vapor phase growing an epitaxial layer on a surface of a semiconductor wafer, comprising:
 conducting the vapor phase growing in a state where the semiconductor wafer is received in the counterbored groove of the susceptor according to  claim 1 .   
     
     
         6 . The method of manufacturing an epitaxial wafer according to  claim 5 , wherein the semiconductor wafer is received in the counterbored groove such that, on the surface of the semiconductor wafer, an edge surface in a direction where close {111} planes are present is positioned opposite the protruding portion.