Light-emitting device containing a composite electroplated substrate

Abstract

The application is related to a method of forming a substrate of a light-emitting diode by composite electroplating. The application illustrates a light-emitting diode comprising the following elements: a light-emitting epitaxy structure, a reflective layer disposed on the light-emitting epitaxy structure, a seed layer disposed on the reflective layer, a composite electroplating substrate disposed on the seed layer by composite electroplating, and a protection layer disposed on the composite electroplating substrate.

1 . A light-emitting diode, comprising:
 a composite electroplating substrate having a first surface and a second surface;   an interfacial layer on the first surface of the composite electroplating substrate;   a seed layer on the interfacial layer;   a reflective layer on the seed layer; and   a semiconductor epitaxy structure on the reflective layer, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer.   
   
   
       2 . The light-emitting diode according to  claim 1 , further including a protection layer on the second surface of the composite electroplating substrate. 
   
   
       3 . The light-emitting diode according to  claim 1 , further including an intermediate layer between the reflective layer and the seed layer. 
   
   
       4 . The light-emitting diode according to  claim 3 , wherein the intermediate layer is a patterned structure. 
   
   
       5 . The light-emitting diode according to  claim 1 , further including a multiple-film layer between the reflective layer and the seed layer. 
   
   
       6 . The light-emitting diode according to  claim 1 , wherein the material of the composite electroplating substrate can be copper-diamond, copper-silicon carbide, nickel-silicon carbide, carbon nanotube-nickel, carbon nanotube-copper, or carbon nano fiber-copper. 
   
   
       7 . The light-emitting diode according to  claim 1 , wherein the composite electroplating substrate is formed by the composite electroplating method. 
   
   
       8 . The light-emitting diode according to  claim 1 , wherein the material of the interfacial layer can be copper, gold, nickel, or tin. 
   
   
       9 . The light-emitting diode according to  claim 1 , wherein the seed layer can be a stack of titanium/gold, titanium/copper, chromium/gold, or chromium/platinum/gold. 
   
   
       10 . The light-emitting diode according to  claim 1 , wherein the reflective layer can be a stack of titanium/aluminum, titanium/gold, or titanium/silver. 
   
   
       11 . The light-emitting diode according to  claim 1 , wherein the first conductivity type semiconductor layer is n-type semiconductor containing at least one or more elements selected from the group consisting of gallium and nitrogen, and the second conductivity type semiconductor layer is p-type semiconductor containing at least one or more elements selected from the group consisting of gallium and nitrogen. 
   
   
       12 . The light-emitting diode according to  claim 1 , wherein the first conductivity type semiconductor layer is n-type semiconductor containing at least one or more elements selected from the group consisting of aluminum, gallium, indium, and phosphorous, and the second conductivity type semiconductor layer is p-type semiconductor containing at least one or more elements selected from the group consisting of aluminum, gallium, indium, and phosphorous. 
   
   
       13 . The light-emitting diode according to  claim 2 , wherein the material of the protection layer can be gold or nickel. 
   
   
       14 . The light-emitting diode according to  claim 3 , wherein the intermediate layer is a patterned structure comprising a low thermal expansion coefficient material. 
   
   
       15 . The light-emitting diode according to  claim 14 , wherein the material of the intermediate layer can be nickel, nickel cobalt alloy, nickel phosphorus alloy, nickel ion alloy, copper tungsten alloy, or copper molybdenum alloy. 
   
   
       16 . The light-emitting diode according to  claim 5 , wherein the multiple-film layer is stacked alternately by multiple high strength films and multiple high toughness films. 
   
   
       17 . The light-emitting diode according to  claim 16 , wherein the material of the multiple-film layer can be a stack of aluminum nitride/aluminum, aluminum nitride/copper, or titanium tungsten/aluminum.