Downhole tool with thin film thermoelectric cooling

Abstract

Apparatus and method for cooling a die downhole are disclosed. The apparatus includes a semiconductor die. A thin film thermoelectric cooling layer is coupled to the semiconductor die, and a heat spreader is coupled to the thin film thermoelectric cooling layer. A method includes conveying a semiconductor die on a carrier to a downhole location and activating a thin film thermoelectric cooling layer coupled to the semiconductor die. The method further includes pumping heat from the thin film thermoelectric cooling layer using a heat spreader coupled to the thin film thermoelectric cooling layer.

1 . An apparatus for cooling a die downhole comprising:
 a semiconductor die conveyable on a carrier to a downhole location;   a thin film thermoelectric cooling layer coupled to the semiconductor die; and   a heat spreader coupled to the thin film thermoelectric cooling layer.   
   
   
       2 . An apparatus according to  claim 1 , wherein the thin film thermoelectric cooling layer includes a superlattice structure of a plurality of alternating layers of thermoelectric materials. 
   
   
       3 . An apparatus according to  claim 2 , wherein the alternating layers comprise alternating bismuth telluride and antimony telluride materials. 
   
   
       4 . An apparatus according to  claim 1 , wherein the heat spreader includes a highly thermally conductive material. 
   
   
       5 . An apparatus according to  claim 1 , wherein the heat spreader comprises diamond as at least one material of construction. 
   
   
       6 . An apparatus according to  claim 1 , wherein the heat spreader comprises aluminum nitride as at least one material of construction. 
   
   
       7 . An apparatus according to  claim 1 , wherein the heat spreader includes a surface area larger than a surface area of the thin film thermoelectric cooling layer. 
   
   
       8 . An apparatus according to  claim 1 , further comprising a heat sink coupled to the heat spreader. 
   
   
       9 . An apparatus according to  claim 8 , wherein the heat sink includes an electrically insulating material selected from alumina, aluminum nitride or a combination thereof. 
   
   
       10 . An apparatus according to  claim 8 , wherein the heat sink includes an electrically conductive material selected from copper, aluminum, silicon or any combination thereof. 
   
   
       11 . An apparatus according to  claim 8 , wherein the heat sink includes a liquid-filled heat pipe in contact with the heat spreader to move the heat from the heat spreader. 
   
   
       12 . An apparatus according to  claim 1  further comprising a package, the semiconductor die, the thin film thermoelectric cooling layer and the heat spreader being disposed within the package. 
   
   
       13 . A method for cooling a die downhole comprising:
 conveying a semiconductor die on a carrier to a downhole location;   removing heat from the semiconductor die using a thin film thermoelectric cooling layer coupled to the semiconductor die; and   pumping heat from the thin film thermoelectric cooling layer using a heat spreader coupled to the thin film thermoelectric cooling layer.   
   
   
       14 . A method according to  claim 13 , wherein pumping heat from the thin film thermoelectric cooling layer includes using a highly thermally conductive material. 
   
   
       15 . A method according to  claim 13 , wherein the heat spreader comprises at least one material of construction selected from diamond and aluminum nitride. 
   
   
       16 . A method according to  claim 13 , wherein pumping heat from the thin film thermoelectric cooling layer includes pumping heat to a heat spreader surface area that is larger than a surface area of the thin film thermoelectric cooling layer. 
   
   
       17 . A method according to  claim 13 , further comprising conveying heat from the heat spreader to a heat sink coupled to the heat spreader. 
   
   
       18 . A method according to  claim 17 , wherein the heat sink includes a material selected from one or more of alumina, aluminum nitride, copper, aluminum, silicon or any combination thereof. 
   
   
       19 . A method according to  claim 17 , wherein the heat sink includes a liquid-filled heat pipe in contact with the heat spreader to move the heat from the heat spreader. 
   
   
       20 . A method according to  claim 13 , wherein the semiconductor die, the thin film thermoelectric cooling layer and the heat spreader are disposed within a package.