Semiconductor chip shape alteration

Abstract

The invention is directed to an improved semiconductor chip that reduces crack initiation and propagation into the active area of a semiconductor chip. A semiconductor wafer includes dicing channels that separate semiconductor chips and holes through a portion of a semiconductor chip, which are located at the intersection of the dicing channels. Once diced from the semiconductor wafer, semiconductor chips are created without ninety degree angle corners.

1 . A semiconductor wafer, comprising:
 a plurality of semiconductor chips separated by dicing channels; and,   a hole created in the dicing channel and a portion of the semiconductor chip at an intersection of the dicing channels.   
   
   
       2 . A wafer as in  claim 1 , shape of the hole comprising one of a circle, diamond, octagon, and concave shape. 
   
   
       3 . A wafer as in  claim 1 , a semiconductor chip in the plurality of semiconductor chips with an absence of a substantially ninety degree corner. 
   
   
       4 . A wafer as in  claim 3 , the semiconductor chip comprising a hard passivation contact area and underfill area. 
   
   
       5 . A wafer as in  claim 4 , the semiconductor chip with a reduced underfill to hard passivation contact area. 
   
   
       6 . A semiconductor chip, comprising:
 an active area towards a center of the chip; and,   an underfill area abutting the active area towards a corner of the chip, the corner of the chip absent a substantially ninety degree angle.   
   
   
       7 . A semiconductor chip as in  claim 6 , the active area separated from the underfill area by a crackstop.