US2010018948A1PendingUtilityA1

Manufacturing method of nozzle for inkjet head

Assignee: SAMSUNG ELECTRO MECHPriority: Jul 19, 2005Filed: Jul 23, 2009Published: Jan 28, 2010
Est. expiryJul 19, 2025(expired)· nominal 20-yr term from priority
B41J 2/162B41J 2/1643B41J 2/1628B41J 2/1629B41J 2/1634B41J 2/1606B41J 2/1433
52
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Claims

Abstract

A manufacturing method of a nozzle for an inkjet head. With the nozzle for an inkjet head, including a first board in which a nozzle hole is perforated, a middle layer stacked on the first board and perforated in an area corresponding to the nozzle hole, and a second board stacked on the middle layer and perforated in an area corresponding to the nozzle hole, where a hydrophobic layer is joined onto the inner perimeter of the nozzle hole and onto the first board around the nozzle hole, the uniformity and reproduction quality may be improved of nozzles treated for hydrophobicity, as the depth of the hydrophobic layer may be controlled to be uniform and the deposition of the hydrophobic layer may be prevented at the back surface of the nozzles.

Claims

exact text as granted — not AI-modified
1 . A method of manufacturing an inkjet head, the method comprising:
 depositing an oxidation layer on a surface of a silicon on insulator (SOI) board, the SOI board formed by attaching a first board and a second board with a middle layer in-between;   forming a nozzle hole on the first board, and forming a head structure on the second board, the head structure comprising an ink passage corresponding to the position of the nozzle hole;   depositing a hydrophobic layer onto the surface of the first board and onto the inner perimeter of the nozzle hole; and   perforating the middle layer to connect the ink passage and the nozzle hole.   
   
   
       2 . The method of  claim 1 , wherein the depositing the oxide layer further comprises lapping the first board before depositing the oxidation layer. 
   
   
       3 . The method of  claim 1 , wherein the first board or the second board comprises single crystal silicon, and the middle layer is an oxidation layer. 
   
   
       4 . The method of  claim 3 , the forming the nozzle hole is performed by patterning and etching processes. 
   
   
       5 . The method of  claim 4 , wherein the etching process is a process whereby silicon is etched and an oxidation layer is not etched. 
   
   
       6 . The method of  claim 5 , wherein the etching process is inductive coupled plasma reactive ion etching (ICPRIE). 
   
   
       7 . The method of  claim 1 , wherein the head structure comprises any one or more of a pressure chamber, an ink injection channel, and a manifold. 
   
   
       8 . The method according to  claim 1 , wherein each of the nozzle hole and the ink passage are in contact with the middle layer. 
   
   
       9 . The method of  claim 1 , wherein the hydrophobic layer is deposited by vacuum deposition or by plating. 
   
   
       10 . The method of  claim 1 , further comprising depositing an oxidation layer on the second board after the forming nozzle hole or the depositing hydrophobic layer. 
   
   
       11 . The method of  claim 1 , wherein in the perforating the middle layer is perforated by a laser or by etching. 
   
   
       12 . The method of  claim 1 , wherein the depositing hydrophobic layer further comprises patterning and etching the hydrophobic layer to remove the hydrophobic layer outside the portion of the nozzle hole.

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