Method and System for Supplying a Cleaning Gas Into a Process Chamber

Abstract

A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.

1 . A process chamber comprising:
 a remote plasma source;   a process chamber having at least two processing regions, each processing region comprising:
 a substrate support assembly disposed in the processing region; 
 a gas distribution system configured to provide gas into the processing region above the substrate support assembly; 
 a gas passage configured to provide gas into the processing region below the substrate support assembly; 
 a first gas conduit configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region; and 
 a second gas conduit configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region. 
   
   
   
       2 . The process chamber of  claim 1  further comprising a valve controlling flow between the first gas conduit and the second gas conduit. 
   
   
       3 . The process chamber of  claim 2 , wherein the valve comprises an aluminum body. 
   
   
       4 . The process chamber of  claim 3 , wherein the valve comprises:
 a movable flapper having a flow-obstructing plate;   at least one magnet encased in the flapper; and   a coupling mechanism operable to rotate the flapper between a first position where the flow-obstructing plate blocks flow through the body and a second position where the flow-obstructing plate allows flow through the body.   
   
   
       5 . The process chamber of  claim 4 , wherein the coupling mechanism is configured to rotate the flapper through magnetic interaction. 
   
   
       6 . The process chamber of  claim 1  further comprising a source of at least one of NF 3 , F 2 , SF 6 , Cl 2 , CF 4 , C 2 F 6 , CCl 4  or C 2 Cl 6  coupled to the remote plasma source. 
   
   
       7 . A substrate processing system comprising:
 a loadlock chamber;   a transfer chamber coupled to the loadlock chamber;   a remote plasma source; and   a process chamber coupled to the transfer chamber, wherein the process chamber comprises:
 a chamber body having at least a first processing region: 
 a first substrate support assembly disposed in the first processing region; 
 a first gas distribution assembly coupled to the remote plasma source and configured to provide gases from the remote plasma source into first processing region from above the substrate support assembly; and 
 a first gas passage coupled to the remote plasma source and configured to provide gases from the remote plasma source into the first processing region from below the substrate support assembly. 
   
   
   
       8 . The substrate processing system of  claim 7 , wherein the chamber body further comprises:
 a second processing region:   a second substrate support assembly disposed in the second processing region;   a second gas distribution assembly coupled to the remote plasma source and configured to provide gases from the remote plasma source into second processing region from above the substrate support assembly; and   a second gas passage coupled to the remote plasma source and configured to provide gases from the remote plasma source into the second processing region from below the substrate support assembly.   
   
   
       9 . The substrate processing system of  claim 8  wherein the first and second gas passages are oriented to produce a substantially inward flow of gases into the interior volume. 
   
   
       10 . The substrate processing system of  claim 8  further comprising:
 a valve having an inlet coupled to the remote plasma source and at least one outlet coupled to the first and second gas passages, wherein the valve comprises:   a movable flapper having a flow-obstructing plate; and   a coupling mechanism operable to rotate the flapper between a first position where the flow-obstructing plate blocks flow through the valve and a second position where the flow-obstructing plate allows gas to pass through the valve.   
   
   
       11 . The substrate processing system of  claim 10 , wherein the coupling mechanism is configured to rotate the flapper through magnetic interaction. 
   
   
       12 . The substrate processing system of  claim 10 , wherein the valve flow contacting surfaces are comprised of a material compatible with at least one of NF 3 , F 2 , SF 6 , Cl 2 , CF 4 , C 2 F 6 , CCl 4  or C 2 Cl 6 .