Method for processing substrate and substrate processing apparatus

Abstract

There is provided a substrate processing method, comprising the steps of: supplying source gas into a processing chamber in which substrates are accommodated; removing the source gas and an intermediate body of the source gas remained in the processing chamber; supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and removing the ozone and the intermediate body of the ozone remained in the processing chamber; with these steps repeated multiple number of times, to thereby form an oxide film on the surface of the substrates by supplying the source gas and the ozone alternately so as not to be mixed with each other.

1 . A substrate processing method, comprising the steps of:
 supplying source gas into a processing chamber in which substrates are accommodated;   removing the source gas and an intermediate body of the source gas remained in the processing chamber;   supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and   removing the ozone and the intermediate body of the ozone remained in the processing chamber;   with these steps repeated multiple number of times, to thereby form an oxide film on the surface of the substrates by supplying the source gas and the ozone alternately so as not to be mixed with each other.   
     
     
         2 . The substrate processing method according to  claim 1 , wherein the source gas is a liquid source at a room temperature and under an atmospheric pressure, and in the source gas supplying step, the source gas is supplied into the processing chamber while exhausting the atmosphere in the processing chamber. 
     
     
         3 . The substrate processing method according to  claim 1 , wherein in the ozone supplying step, a pressure in the processing chamber immediately after supplying the ozone is set to be 0.1 to 100 Pa. 
     
     
         4 . The substrate processing method according to  claim 1 , wherein an ozone reserving step of reserving the ozone into a gas reservoir connected to the processing chamber is provided before the ozone supplying step, and in the ozone supplying step, the ozone reserved into the gas reservoir is supplied into the processing chamber. 
     
     
         5 . The substrate processing method according to  claim 4 , wherein the ozone reserving step is performed simultaneously with the source gas supplying step and/or the source gas removing step. 
     
     
         6 . A substrate processing method, comprising the steps of:
 loading substrates into a processing chamber;   supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and   removing the ozone and an intermediate body of the ozone remained in the processing chamber,   with the ozone supplying step and the ozone removing step repeated multiple number of times, to thereby form an oxide film on the surface of the substrates.   
     
     
         7 . The substrate processing method according to  claim 6 , wherein an ozone reserving step of reserving the ozone into a gas reservoir connected to the processing chamber is provided before the ozone supplying step, and in the ozone supplying step, the ozone reserved into the gas reservoir is supplied into the processing chamber. 
     
     
         8 . A substrate processing apparatus, comprising:
 a processing chamber that processes substrates;   a gas supply unit that supplies ozone into the processing chamber;   an exhaust unit that exhausts an atmosphere in the processing chamber; and   a controller,   with the gas supply unit having an ozone supply path connected to the processing chamber, and an ozone supply valve performing open/close of the ozone supply path,   with the exhaust unit having an exhaust path connected to the processing chamber and an exhaust valve that opens and closes the exhaust path, and   with the controller controlling the gas supply unit and the exhaust unit so that the ozone is supplied into the processing chamber from the ozone supply path in a state of substantially stopping exhaust of an atmosphere in the processing chamber, when the ozone is supplied into the processing chamber.   
     
     
         9 . The substrate processing apparatus according to  claim 8 , wherein the gas supply unit has a gas reservoir disposed on an upper stream side of the ozone supply valve, for accumulating ozone, and the controller controls the gas supply unit so that the ozone accumulated in the gas reservoir is supplied into the processing chamber by opening the ozone supply valve, after the ozone is supplied to the ozone supply path and the ozone is accumulated in the gas reservoir in a state of closing the ozone supply valve. 
     
     
         10 . The substrate processing apparatus according to  claim 9 , wherein the gas supply unit includes a cooling unit having a cooling medium for cooling the gas reservoir.