Carbon nanotube device and process for manufacturing same

Abstract

The present invention contemplates a variety of methods and techniques for fabricating an improved carbon nanotube (CNT) device such as an AFM probe. A CNT is first formed on a desired location such as a substrate. The CNT and substrate are then covered with a protective layer through a CVD or other suitable process. Then a length of the CNT is exposed through etching or other suitable process, the exposed length being formed to a length suitable for a desired application for the CNT device.

1 . A process for fabricating a carbon nanotube (CNT) device, the process comprising:
 growing a defined length of a CNT structure on a substrate using a first thermal CVD process, wherein the CNT structure grown using the first thermal CVD process includes single or multi-walled tubes of graphite.   
     
     
         2 . The process of  claim 1 , wherein the CNT structure has a first end and a second end, the first end forming a CNT tip, and the second end attached to a surface of the substrate. 
     
     
         3 . The process of  claim 2 , further comprising:
 forming a protective layer covering the CNT structure.   
     
     
         4 . The process of  claim 3 , wherein the protective layer is formed using one or more of:
 a second thermal CVD process;   a physical vapor deposition process;   a CVD process;   a plasma-enhanced CVD process;   an electrochemical deposition process;   a molecular beam epitaxy process;   an electrochemical deposition process;   a spin casting process;   an evaporation process;   a reactive growth process; or   an atomic layer deposition process.   
     
     
         5 . The process of  claim 3 , wherein the protective layer is one or more of:
 an SiO2 surface;   a doped silicon surface;   a compound silicon surface;   a polymer surface; or   a lithographic resist surface.   
     
     
         6 . The process of  claim 3 , wherein the protective layer is formed for providing an insulating surface surrounding the CNT structure. 
     
     
         7 . The process of  claim 3 , wherein the protective layer is formed for controlling an exposed length and/or an exposed shape of the CNT tip. 
     
     
         8 . The process of  claim 7 , wherein the exposed length and/or the exposed shape of the CNT tip is controlled to adapt the CNT device for an intended application. 
     
     
         9 . The process of  claim 8 , further comprising:
 removing a controlled portion of the protective layer to expose a first desired length and/or to establish a first desired shape of the first end of the CNT structure, wherein the first desired length and/or the first desired shape are specifically established based on the intended application of the CNT device.   
     
     
         10 . The process of  claim 9 , wherein the steps of forming the protective layer and removing the controlled portion of the protective layer are iteratively repeated until a final desired length and/or a final desired shape of the first end of the CNT structure are achieved. 
     
     
         11 . The process of  claim 9 , wherein the intended application is one or more of:
 an atomic-force microscope (AFM) probing application;   high aspect ratio imaging application; or   electrochemical applications.   
     
     
         12 . The process of  claim 1 , further including:
 growing the CNT structure using the thermal CVD process without exposing the CNT structure to a field influence during said growth.   
     
     
         13 . The process of  claim 12 , wherein the field influence includes one or more of:
 an electric field;   a magnetic field; or   a light source.   
     
     
         14 . A process for fabricating a carbon nanotube (CNT) device, the process comprising:
 growing a defined length and/or a defined shape of a CNT structure on a substrate using a first deposition process, wherein the first deposition process utilizes a CVD technique that does not apply a field influence during the growth of the CNT structure.   
     
     
         15 . The process of  claim 14 , wherein the field influence includes one or more of:
 an electric field;   a magnetic field; or   a light source.   
     
     
         16 . The process of  claim 15 , wherein the CNT structure has a first end and a second end, the first end forming a CNT tip, and the second end attached to a surface of the substrate. 
     
     
         17 . The process of  claim 16 , further comprising:
 forming a protective layer covering the CNT structure.   
     
     
         18 . The process of  claim 17 , wherein the protective layer is formed using one or more of:
 a second thermal CVD process;   a physical vapor deposition process;   a CVD process;   a plasma-enhanced CVD process;   an electrochemical deposition process;   a molecular beam epitaxy process;   an electrochemical deposition process;   a spin casting process;   an evaporation process;   a reactive growth process; or   an atomic layer deposition process.   
     
     
         19 . The process of  claim 17 , wherein the protective layer is one or more of:
 an SiO2 surface;   a doped silicon surface;   a compound silicon surface;   a polymer surface; or   a lithographic resist surface.   
     
     
         20 . The process of  claim 17 , further comprising:
 removing a controlled portion of the protective layer to expose a first desired length and/or to establish a first desired shape of the first end of the CNT structure, wherein the first desired length and/or the first desired shape are specifically established based on the intended application of the CNT device.   
     
     
         21 . The process of  claim 20 , wherein the steps of forming the protective layer and removing the controlled portion of the protective layer are iteratively repeated until a final desired length and/or a final desired shape of the first end of the CNT structure are achieved. 
     
     
         22 . The process of  claim 20 , wherein the intended application is one or more of:
 an atomic-force microscope (AFM) probing application;   high aspect ratio imaging application; or   electrochemical applications.   
     
     
         23 . A carbon nanotube (CNT) device comprising:
 a substrate; and   a CNT structure having a first end and a second end, wherein the first end of the CNT structure is a CNT tip, and wherein the second end of the CNT structure is attached to the substrate;   wherein, the CNT structure is grown on the substrate using a first thermal CVD process, and   wherein the CNT grown using the first thermal CVD process includes single or multi-walled tubes of graphite.   
     
     
         24 . The CNT device of  claim 23 , further comprising:
 a protective layer covering the CNT.   
     
     
         25 . The CNT device of  claim 24 , wherein the protective layer is formed using one or more of:
 a second thermal CVD process;   a physical vapor deposition process;   a CVD process;   a plasma-enhanced CVD process;   an electrochemical deposition process;   a molecular beam epitaxy process;   an electrochemical deposition process;   a spin casting process;   an evaporation process;   a reactive growth process; or   an atomic layer deposition process.   
     
     
         26 . The CNT device of  claim 24 , wherein the protective layer is one or more of:
 an SiO2 surface;   a doped silicon surface;   a compound silicon surface;   a polymer surface; or   a lithographic resist surface.   
     
     
         27 . The CNT device of  claim 24 , wherein the protective layer is formed for providing an insulating surface surrounding the CNT structure. 
     
     
         28 . The CNT device of  claim 24 , wherein the protective layer is formed for controlling an exposed length and/or an exposed shape of the CNT tip. 
     
     
         29 . The CNT device of  claim 28 , wherein the exposed length and/or the exposed shape of the CNT tip is controlled to adapt the CNT device for an intended application. 
     
     
         30 . The CNT device of  claim 27 , wherein a controlled portion of the protective layer is removed to expose a first desired length and/or to establish a first desired shape of the first end of the CNT structure, wherein the first desired length and/or the first desired shape are specifically established based on the intended application of the CNT device. 
     
     
         31 . The CNT device of  claim 30 , wherein the intended application is one or more of:
 an atomic-force microscope (AFM) probing application;   high aspect ratio imaging application; or   electrochemical applications.   
     
     
         32 . The CNT device of  claim 23 , wherein the CNT structure is grown using the thermal CVD process without exposing the CNT structure to a field influence during said growth. 
     
     
         33 . The process of  claim 32 , wherein the field influence includes one or more of:
 an electric field;   a magnetic field; or   a light source.