US2010001763A1PendingUtilityA1

Semiconductor integrated circuit, layout design method of semiconductor integrated circuit, and layout program product for same

Assignee: NEC ELECTRONICS CORPPriority: Jun 13, 2007Filed: Sep 8, 2009Published: Jan 7, 2010
Est. expiryJun 13, 2027(~0.9 yrs left)· nominal 20-yr term from priority
G06F 30/392
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Claims

Abstract

A semiconductor integrated circuit includes multiple cells each containing transistors. The transistors include a gate and diffusion layers. The multiple cells are adjacently formed in a first direction perpendicular to the gate. The distance between the cell border and the adjacent and corresponding diffusion layer, the first direction, is the same.

Claims

exact text as granted — not AI-modified
1 . A semiconductor integrated circuit, comprising:
 a plurality of first cells each including a first circuit and a first transistor having a first gate extending in a first direction and a plurality of first diffusion layers so that said first gate is arranged between said diffusion layers; and   a plurality of second cells each including a second circuit different from said first circuit, and a second transistor having a second gate extending in said first direction and a plurality of second diffusion layers, said second gate being arranged between said second diffusions layers,   wherein a distance between adjacent diffusion layers of first and second cells adjacently arranged among said first and second cells, in a second direction perpendicular to the first direction, and a distance between adjacent diffusion layers of first cells adjacently arranged among said first and second cells, in said second direction.   
     
     
         2 . The semiconductor integrated circuit according to  claim 1 ,
 wherein said first circuit comprises an inverter circuit, and said second circuit comprises a NAND circuit.

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