Light-emitting device and method for manufacturing the same

Abstract

A light-emitting device is disclosed. The light-emitting device comprises a substrate, wherein an ion implanted layer on the top surface of the substrate; a thin silicon film disposing on the ion implanted layer; and a light-emitting stack layer on the thin silicon film. This invention also discloses a method of manufacturing a light-emitting device comprising providing a substrate; forming an ion implanted layer on the top surface of the substrate; providing a light-emitting stack layer; forming a thin silicon film on the bottom surface of the light-emitting stack layer; and bonding the light-emitting stack layer to the substrate with the anodic bonding technique.

1 . A method of manufacturing a light-emitting device comprising the steps of:
 providing a first substrate;   forming a light-emitting stack layer on the first substrate;   forming a thin silicon film on the light-emitting stack layer;   providing a second substrate disposed on the thin silicon film;   forming an ion implanted layer on the second substrate;   providing an electrode potential difference to form an oxide layer between the thin silicon film and the ion implanted layer; and   removing the first substrate.   
   
   
       2 . The method of manufacturing a light-emitting device according to  claim 1 , wherein the step of forming the light-emitting stack layer further comprising the steps of:
 forming a first-type conductivity semiconductor layer on the first substrate;   forming a light-emitting layer on the first-type conductivity semiconductor layer; and   forming a second-type conductivity semiconductor layer on the light-emitting layer.   
   
   
       3 . The method of manufacturing a light-emitting device according to  claim 1 , further comprising the step of forming at least an electrode on the light-emitting stack layer. 
   
   
       4 . The method of manufacturing a light-emitting device according to  claim 1 , wherein the step of forming the ion implanted layer is a step of forming a patterned ion implanted layer. 
   
   
       5 . The method of manufacturing a light-emitting device according to  claim 4 , wherein the patterned ion implanted layer further comprising patterns selected from the group consisting of a regular symmetry pattern and an irregular asymmetry pattern. 
   
   
       6 . The method of manufacturing a light-emitting device according to  claim 4 , wherein the patterned ion implanted layer covers about 15% to 85% of the surface area of the second substrate. 
   
   
       7 . The method of manufacturing a light-emitting device according to  claim 4 , wherein the patterned ion implanted layer covers about 30% to 60% of the surface area of the second substrate. 
   
   
       8 . The method of manufacturing a light-emitting device according to  claim 1 , wherein the step of forming an ion implanted layer on the second substrate is proceeded in an oxygen-containing environment, and the ions implanted in the ion implanted layer comprises sodium ions. 
   
   
       9 . The method of manufacturing a light-emitting device according to  claim 1 , further comprising a step of thermal driving the ion implanted layer in an oxygen-containing environment. 
   
   
       10 . The method of manufacturing a light-emitting device according to  claim 1 , wherein the electrode potential difference is between 500 volts to 1200 volts. 
   
   
       11 . A light-emitting device, comprising:
 a substrate, wherein a surface of the substrate comprising an ion implanted layer;   a light-emitting stack layer disposed on the ion implanted layer; and   an adhesive layer, connecting the substrate with the light-emitting stack layer, wherein the adhesive layer at least comprises a thin silicon film disposed between the ion implanted layer and the light-emitting layer.   
   
   
       12 . A light-emitting device according to  claim 11 , wherein the adhesive layer is a multi-layer structure. 
   
   
       13 . A light-emitting device according to  claim 11 , wherein the adhesive layer further comprising an oxide layer disposed between the ion implanted layer and the thin silicon film. 
   
   
       14 . A light-emitting device according to  claim 11 , wherein the light-emitting stack layer further comprising:
 a first-type conductivity semiconductor layer disposed on the thin silicon film;   a light-emitting layer disposed on the first-type conductivity semiconductor layer; and   a second-type conductivity semiconductor layer disposed on the light-emitting layer.   
   
   
       15 . A light-emitting device according to  claim 14 , further comprising a first electrode and a second electrode respectively disposed on the first-type conductivity semiconductor layer and the second-type conductivity semiconductor layer. 
   
   
       16 . A light-emitting device according to  claim 11 , wherein the ion implanted layer comprises sodium ions. 
   
   
       17 . A light-emitting device according to  claim 11 , wherein the ion implanted layer is a patterned ion implanted layer. 
   
   
       18 . A light-emitting device according to  claim 17 , wherein the patterned ion implanted layer further comprising patterns selected from the group consisting of a regular symmetry pattern and an irregular asymmetry pattern. 
   
   
       19 . A light-emitting device according to  claim 17 , wherein the patterned ion implanted layer covers about 15% to 85% of the surface area of the second substrate. 
   
   
       20 . A light-emitting device according to  claim 17 , wherein the patterned ion implanted layer covers about 30% to 60% of the surface area of the second substrate.