Storage capacitor in oled pixels and driving circuits and method for forming the same

Abstract

An electroluminescence device includes a substrate and a plurality of pixels. Each pixel includes a first area including at least a first capacitor and a second capacitor, the first capacitor including a first conductive layer, a first dielectric layer over the first conductive layer, and a second conductive layer over the first dielectric layer, and the second capacitor including the second conductive layer, a second dielectric layer over the second conductive layer, and a third conductive layer over the second dielectric layer, and a transistor in a second area. The transistor includes a first semiconductor layer formed on the substrate, a first gate oxide layer over the first semiconductor layer, a fourth conductive layer over the first gate oxide layer, and a seventh conductive layer contacting the first semiconductor layer, wherein the seventh conductive layer is formed of the same conductive film as the second conductive layer.

1 . An electroluminescence (EL) device, comprising:
 a substrate; and   a plurality of pixels formed on the substrate, each pixel being in a respective pixel area, each pixel area including at least a first area and a second area, each pixel including
 at least a first capacitor and a second capacitor in the first area, the first capacitor including a first conductive layer, a first dielectric layer over the first conductive layer, and a second conductive layer over the first dielectric layer, and the second capacitor including the second conductive layer, a second dielectric layer over the second conductive layer, and a third conductive layer over the second dielectric layer; 
 a transistor in the second area, the transistor including a first semiconductor layer formed on the substrate, a first gate oxide layer over the first semiconductor layer, a fourth conductive layer over the first gate oxide layer, and a seventh conductive layer contacting the first semiconductor layer, wherein the seventh conductive layer is formed of the same conductive film as the second conductive layer; and 
 a light emitting device in the third area, the light emitting device including a fifth conductive layer, a first organic layer over the fifth conductive layer, and a sixth conductive layer over the first organic layer. 
   
   
   
       2 . The device of  claim 1 , wherein the first conductive layer is formed of the same conductive film as the fourth conductive layer. 
   
   
       3 . The device of  claim 1 , wherein the third conductive layer is formed of the same conductive film as the sixth conductive layer. 
   
   
       4 . The device of  claim 1 , wherein the fifth conductive layer is an ITO layer and the ITO layer contacts the seventh conductive layer. 
   
   
       5 . The device of  claim 1 , wherein the first organic layer extends to the first area and is between the second dielectric layer and the third conductive layer in the. 
   
   
       6 . The device of  claim 1 , wherein the first dielectric layer comprises an interlayer dielectric. 
   
   
       7 . The device of  claim 1 , wherein the second dielectric layer comprises a layer of passivation silicon nitride.