Semiconductor light emitting device

Abstract

Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first semiconductor layer, a second semiconductor layer, an active layer formed between the first semiconductor layer and the second semiconductor layer, a first reflective electrode on the first semiconductor layer to reflect incident light, and a second reflective electrode on the second semiconductor layer to reflect the incident light.

1 . A semiconductor light emitting device comprising:
 a first semiconductor layer;   a second semiconductor layer;   an active layer formed between the first semiconductor layer and the second semiconductor layer;   a first reflective electrode on the first semiconductor layer to reflect incident light; and   a second reflective electrode on the second semiconductor layer to reflect the incident light.   
   
   
       2 . The semiconductor light emitting device as claimed in  claim 1 , comprising a transparent electrode formed between the second semiconductor layer and the second reflective electrode, and wherein the first semiconductor layer is a n-type semiconductor layer and the second semiconductor layer is a p-type semi-conductor layer. 
   
   
       3 . The semiconductor light emitting device as claimed in  claim 2 , wherein the transparent electrode is formed of transparent conductive oxide layer. 
   
   
       4 . The semiconductor light emitting device as claimed in  claim 2 , wherein the transparent electrode comprises material selected from the group consisting of ITO, CTO, SnO 2 , ZnO, RuO x , TiO x , IrO x  and Ga x O y . 
   
   
       5 . The semiconductor light emitting device as claimed in  claim 1 , wherein the first reflective electrode comprises a plurality of divided electrodes. 
   
   
       6 . The semiconductor light emitting device as claimed in  claim 5 , wherein the divided electrodes are electrically interconnected and formed on the same plane. 
   
   
       7 . The semiconductor light emitting device as claimed in  claim 1 , wherein the first reflective electrode is formed on the first semiconductor layer that is formed at the both sides of the second semiconductor layer, or the first reflective electrode is formed on the first semiconductor layer that is formed at the both sides of the second semiconductor layer and at the divided portion of the second semi-conductor layer. 
   
   
       8 . The semiconductor light emitting device as claimed in  claim 1 , wherein the second reflective electrode comprises a plurality of divided electrodes. 
   
   
       9 . The semiconductor light emitting device as claimed in  claim 8 , wherein the divided electrodes are electrically interconnected. 
   
   
       10 . The semiconductor light emitting device as claimed in  claim 8 , wherein the divided electrodes are formed of ‘ ’ shape. 
   
   
       11 . The semiconductor light emitting device as claimed in  claim 1 , wherein at least one of the first reflective electrode and the second reflective electrode is formed in the form of a single layer comprising Ag or Al, or a multi-layer comprising Ag or Al. 
   
   
       12 . The semiconductor light emitting device as claimed in  claim 1 , wherein light generated from the active layer is emitted in an upward direction toward the first reflective electrode and the second reflective electrode. 
   
   
       13 . A semiconductor light emitting device comprising:
 a first semiconductor layer;   a second semiconductor layer;   an active layer formed between the first semiconductor layer and the second semiconductor layer;   a first electrode on the first semiconductor layer; and   a second electrode on the second semiconductor layer,   wherein at least one of the first electrode and the second electrode is divided into a plurality of electrodes.   
   
   
       14 . The semiconductor light emitting device as claimed in  claim 13 , comprising a transparent electrode formed between the second semiconductor layer and the second electrode, and wherein the first semiconductor layer is a n-type semi-conductor layer and the second semiconductor layer is a p-type semiconductor layer. 
   
   
       15 . The semiconductor light emitting device as claimed in  claim 14 , wherein the transparent electrode is formed of transparent conductive oxide layer. 
   
   
       16 . The semiconductor light emitting device as claimed in  claim 14 , wherein the transparent electrode comprises material selected from the group consisting of ITO, CTO, SnO 2 , ZnO, RuO x , TiO x , IrO x  and Ga x O y . 
   
   
       17 . The semiconductor light emitting device as claimed in  claim 13 , wherein the divided first or second electrodes are electrically interconnected. 
   
   
       18 . The semiconductor light emitting device as claimed in  claim 13 , wherein the first electrode is divided to two or three parts, and the second electrode is divided to two parts. 
   
   
       19 . The semiconductor light emitting device as claimed in  claim 13 , wherein the first and second electrodes are formed with reflective electrodes that reflect incident light. 
   
   
       20 . The semiconductor light emitting device as claimed in  claim 13 , at least one of the first electrode and the second electrode is formed in the form of a single layer comprising Ag or Al, or a multi-layer comprising Ag or Al.