Method for producing semiconductor wafer

Abstract

A semiconductor wafer is produced by a method comprising a slicing step of cutting out a thin disc-shaped semiconductor wafer from a crystalline ingot; and a fixed grain bonded abrasive grinding step of sandwiching the semiconductor wafer between a pair of upper and lower plates each having a pad of fixed grain bonded abrasive to simultaneously grind both surfaces of the semiconductor wafer.

1 . A method for producing a semiconductor wafer, comprising a slicing step of cutting out a thin disc-shaped semiconductor wafer from a crystalline ingot; and a fixed grain bonded abrasive grinding step of sandwiching the semiconductor wafer between a pair of upper and lower plates each having a pad of fixed grain bonded abrasive to simultaneously grind both surfaces of the semiconductor wafer. 
     
     
         2 . A method for producing a semiconductor wafer, comprising a slicing step of cutting out a thin disc-shaped semiconductor wafer from a crystalline ingot; a double-sided polishing step of simultaneously polishing both surfaces of the semiconductor wafer; and a one-side finish polishing step being subjected to a one-side face of the semiconductor wafer polished at the double-sided polishing step, which further comprises between the slicing step and the double-sided polishing step a fixed grain bonded abrasive grinding step wherein the semiconductor wafer is fitted into a circular hole of a carrier having a plurality of circular holes closely aligned to each other and the carrier is sandwiched between a pair of upper and lower plates each having a pad of fixed grain bonded abrasive and then the upper and lower plates are rotated while oscillating the carrier in the same horizontal plane to simultaneously conduct a high-speed treatment from rough grinding to finish grinding on both surfaces of the semiconductor wafer at once; and a chemical treating step wherein reduction of working strain on the surfaces and an end face of the semiconductor wafer and a finish beveling of rendering the end face of the semiconductor wafer into a given beveled form are simultaneously conducted in any order. 
     
     
         3 . A method for producing a semiconductor wafer according to  claim 1  or  2 , wherein the semiconductor wafer is a silicon wafer having a diameter of not less than 450 mm.