US2009311516A1PendingUtilityA1

Ti-based composite material and method for making the same

Assignee: FOXCONN TECH CO LTDPriority: Jun 13, 2008Filed: Mar 26, 2009Published: Dec 17, 2009
Est. expiryJun 13, 2028(~1.9 yrs left)· nominal 20-yr term from priority
Inventors:Pai-Sheng Wei
C25D 11/246C25D 11/26C25D 11/12Y10T428/264C25D 11/04C23C 28/042
42
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A method for making a Ti-based composite material, comprising steps of: providing a Ti-based block; forming an aluminum layer on the Ti-based block; anodizing the aluminum layer to form a transparent aluminum oxide film; and continuing the anodizing process to form a titanium oxide film between the aluminum oxide film and the Ti-based block. Thus the aluminum oxide film is located at an outmost side of the Ti-base composite material for protecting the composite material from contamination. The titanium oxide film is located between the Ti-based block and the aluminum oxide film for enhancing an aesthetic feeling of products made of the Ti-based composite materials.

Claims

exact text as granted — not AI-modified
1 . A Ti-based composite material, comprising:
 a Ti-based block;   a titanium oxide layer directly and integrally formed on the Ti-based block; and   an aluminum oxide layer directly and integrally formed on the titanium oxide layer.   
   
   
       2 . The Ti-based composite material of  claim 1 , wherein the aluminum oxide layer is transparent. 
   
   
       3 . The Ti-based composite material of  claim 1 , wherein the aluminum oxide layer has a thickness in a range of 5-30 μm. 
   
   
       4 . The Ti-based composite material of  claim 1 , wherein the Ti-based block is Ti or Ti-alloy. 
   
   
       5 . A method for making a Ti-based composite material, comprising steps of:
 providing a Ti-based block;   forming an aluminum layer on the Ti-based block;   anodizing the aluminum layer to form a transparent aluminum oxide film; and   continuing the anodizing process to form a titanium oxide film between the aluminum oxide film and the Ti-based block.   
   
   
       6 . The method of  claim 5 , wherein a plurality of micro-pores are formed in the aluminum oxide film during the step of anodizing the aluminum layer, and the micro-pores are sealed after forming the titanium oxide film. 
   
   
       7 . The method of  claim 6 , wherein a method for sealing the micro-pores is one of hydration sealing, inorganic salt solutions sealing, and lacquer film sealing. 
   
   
       8 . The method of  claim 6 , wherein the aluminum layer is coated on the Ti-based block through vacuum sputtering or vaporization. 
   
   
       9 . The method of  claim 6 , wherein the aluminum oxide film is formed by anodizing the aluminum layer for 10-30 minutes in a sulfuric acid solution with a concentration in a range of 10-20 wt % and a temperature in a range of 293-303K. 
   
   
       10 . The method of  claim 9 , wherein an anodizing voltage is in a range of 10-20V, and a current density through the aluminum layer is 1-2 A/dm 2 . 
   
   
       11 . The method of  claim 10 , wherein the aluminum oxide film has a thickness in a range of 5-30 μm. 
   
   
       12 . The method of  claim 5 , wherein the Ti-based block is Ti or Ti-alloy.

Join the waitlist — get patent alerts

Track US2009311516A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.