Techniques and systems for analyte detection

Abstract

Techniques are used to detect and identify analytes. Techniques are used to fabricate and manufacture sensors to detect analytes. An analyte ( 810 ) is sensed by sensors ( 820 ) that output electrical signals in response to the analyte. The electrical signals may be preprocessed ( 830 ) by filtering and amplification. In one embodiment, a plurality of sensors are formed on a single integrated circuit. The sensors may have diverse compositions.

1 .- 17 . (canceled) 
     
     
         18 . A method of forming a structure comprising:
 forming a plurality of electrodes on a relatively planar surface;   forming a hurdle structure on the surface, the hurdle structure extending perpendicular to the surface and positioned between the electrodes; and   depositing a film to cover the hurdle structure and the electrodes.   
     
     
         19 . The method of  claim 18  wherein a thickness of the film is determined by the surface tension of the film. 
     
     
         20 . The method of  claim 18  wherein the hurdle structure is formed using micromachining techniques. 
     
     
         21 . The method of  claim 18  wherein the electrodes electrically couple the sensor material to semiconductor devices beneath the surface. 
     
     
         22 . The method of  claim 18  wherein the electrodes are used to measure a resistance of the sensor material. 
     
     
         23 . The method of  claim 18  wherein the electrodes are used to measure a resistance of the sensor material along a current path that is perpendicular to the surface. 
     
     
         24 - 34 . (canceled) 
     
     
         35 . A detecting device, comprising:
 a plurality of electrodes provided on a relatively planar surface;   a hurdle structure provided on the surface, the hurdle structure extending perpendicular to the surface and positioned between the electrodes; and   a film covering the hurdle structure and the electrodes.   
     
     
         36 . The detecting device of  claim 35  wherein a thickness of the film is determined by the surface tension of the film. 
     
     
         37 . The detecting device of  claim 35  wherein the hurdle structure is formed using micromachining techniques. 
     
     
         38 . The detecting device of  claim 35  wherein the electrodes electrically couple the sensor material to semiconductor devices beneath the surface. 
     
     
         39 . The detecting device of  claim 35  wherein the electrodes are used to measure a resistance of the sensor material. 
     
     
         40 . The detecting device of  claim 35  wherein the electrodes are used to measure a resistance of the sensor material along a current path that is perpendicular to the surface.