US2009309239A1PendingUtilityA1

Semiconductor device and manufacturing method of the semiconductor device

Assignee: FUJITSU MICROELECTRONICS LTDPriority: Jun 11, 2008Filed: Feb 27, 2009Published: Dec 17, 2009
Est. expiryJun 11, 2028(~1.9 yrs left)· nominal 20-yr term from priority
H10W 90/754H10W 90/734H10W 90/732H10W 90/724H10W 90/722H10W 74/15H10W 74/012H10W 74/00H10W 72/9415H10W 72/07236H10W 72/07233H10W 72/07232H10W 72/07178H10W 72/5525H10W 72/5522H10W 72/952H10W 72/923H10W 72/884H10W 72/0711H10W 72/354H10W 72/352H10W 72/325H10W 72/241H10W 72/90H10W 72/075H10W 72/074H10W 72/073H10W 72/072H10W 72/30H10W 72/00H10W 70/65H10W 90/701H10W 90/00H10W 74/121H10W 74/019H10W 90/28H10W 90/753H10W 72/9445H10W 72/07188H10W 70/68H10W 70/60
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Claims

Abstract

A semiconductor device includes a supporting board, a first semiconductor element mounted on a main surface of the supporting board; and an electronic component provided between the supporting board and the first semiconductor element; wherein the supporting board includes a concave part formed in a direction separated from the first semiconductor element; and at least a part of the electronic component is accommodated in the concave part.

Claims

exact text as granted — not AI-modified
1 . A semiconductor device, comprising:
 a supporting board;   a first semiconductor element mounted on a main surface of the supporting board; and   an electronic component provided between the supporting board and the first semiconductor element;   wherein the supporting board includes a concave part formed in a direction separating from the first semiconductor element; and   at least a part of the electronic component is accommodated in the concave part.   
     
     
         2 . The semiconductor device as claimed in  claim 1 ,
 wherein the supporting board is bent to a side opposite to the first semiconductor element; and   the concave part is formed by bending of the supporting board.   
     
     
         3 . The semiconductor device as claimed in  claim 1 ,
 wherein a part of the supporting board where the concave part is formed includes the same thickness as thickness of other parts of the supporting board.   
     
     
         4 . The semiconductor device as claimed in  claim 1 ,
 wherein a size of the concave part is smaller than a size of a surface of the first semiconductor element, the surface being facing the supporting board.   
     
     
         5 . The semiconductor device as claimed in  claim 1 ,
 wherein the electronic component is a second semiconductor element provided independently from the first semiconductor element.   
     
     
         6 . The semiconductor device as claimed in  claim 1 ,
 wherein the first semiconductor element is flip-chip mounted on the supporting board via an outside connection terminal; and   the thickness of the electronic component is greater than a height of the outside connection terminal.   
     
     
         7 . The semiconductor device as claimed in  claim 5 ,
 wherein an insulation layer including elasticity is provided in a space between the first semiconductor element and the electronic component.   
     
     
         8 . The semiconductor device as claimed in  claim 1 ,
 wherein the electronic component is mounted on the supporting board, coupled to the supporting board by wire bonding, and is sealed by resin.   
     
     
         9 . The semiconductor device as claimed in  claim 1 ,
 wherein an adhesive is provided in a space between the supporting board and the first semiconductor element so that the supporting board and the first semiconductor element are fixed to each other.   
     
     
         10 . The semiconductor device as claimed in  claim 1 ,
 wherein the supporting board expands by heating and includes a flexibility.   
     
     
         11 . A manufacturing method of a semiconductor device, comprising:
 pressing an electronic component to a main surface of a supporting board via a first semiconductor element so that the supporting board is deformed in a direction separating from the first semiconductor element, whereby at least a part of the electronic component is accommodated in a concave part formed at the supporting board.   
     
     
         12 . The manufacturing method of a semiconductor device as claimed in  claim 11 ,
 wherein the supporting board is heated when the electronic component is pressed to the supporting board.   
     
     
         13 . The manufacturing method of a semiconductor device as claimed in  claim 11 , further comprising:
 mounting the first semiconductor element on the main surface of the supporting board.   
     
     
         14 . The manufacturing method of a semiconductor device as claimed in  claim 11 ,
 wherein the electronic component is a second semiconductor element provided independently from the first semiconductor element.   
     
     
         15 . The manufacturing method of a semiconductor device as claimed in  claim 11 ,
 wherein the supporting board is mounted on a stage including an upper part where a concave part is formed; and   the supporting board is bent into the concave part of the stage when the supporting board is locally heated.   
     
     
         16 . The manufacturing method of a semiconductor device as claimed in  claim 11 ,
 wherein a cross section of an edge part defining an external circumferential part of the concave part of the supporting board is expanding upward.   
     
     
         17 . The manufacturing method of a semiconductor device as claimed in  claim 11 ,
 wherein the concave part of the supporting board includes a depth whereby, when the supporting board is bent, a lower surface of the bent part of the supporting board comes in contact with a bottom surface of the concave part of the supporting board.   
     
     
         18 . The manufacturing method of a semiconductor device as claimed in  claim 11 ,
 wherein the first semiconductor element is heated by a jig, the jig being configured to attract and hold the first semiconductor element; and   heat of the first semiconductor element is conducted to the supporting board via an outside connection terminal and the electronic component, the outside connection terminal being provided on the first semiconductor element and configured to couple the supporting board and the first semiconductor element to each other.   
     
     
         19 . The manufacturing method of a semiconductor device as claimed in  claim 11 ,
 wherein the supporting board is locally heated at a temperature equal to or greater than a glass transition temperature of the supporting board.   
     
     
         20 . A manufacturing method of a semiconductor device, comprising:
 providing a second semiconductor element between a supporting board and a first semiconductor element;   pressing the second semiconductor element to the supporting board via the first semiconductor element where the supporting board is heated, so that the supporting board is locally bent; and   fixing the first semiconductor element to the supporting board where the supporting board is bent.

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