US2009309145A1PendingUtilityA1

Method and system for patterning of magnetic thin flims using gaseous transformation

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Assignee: IBMPriority: Oct 8, 2003Filed: Aug 20, 2009Published: Dec 17, 2009
Est. expiryOct 8, 2023(expired)· nominal 20-yr term from priority
Inventors:David W. AbrahamEugene J. O'Sullivan
C23F 4/00H01F 41/34Y10T428/12542G11B 5/3116G11B 5/3903G11B 5/3163G11B 5/3909B82Y 25/00B82Y 10/00H01F 41/308H01F 10/3254H10N 50/01
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Claims

Abstract

A magnetic thin film includes a magnetic tunnel junction defined by a surrounding region including a fluorinated, non-magnetic, electrically insulating material.

Claims

exact text as granted — not AI-modified
1 . A magnetic thin film, comprising:
 a magnetic tunnel junction (MTJ) defined by a surrounding region comprising a fluorinated, non-magnetic, electrically insulating material.   
     
     
         2 . The magnetic thin film of  claim 1 , wherein said fluorinated, non-magnetic, electrically insulating material comprises one of a fluorinated Permalloy™ material and a fluorinated alloy material of any of nickel, iron, and cobalt. 
     
     
         3 . A magnetic device, comprising:
 the magnetic thin film of  claim 1 ; and   a conductive member coupled to said MTJ.   
     
     
         4 . The magnetic device of  claim 3 , wherein said fluorinated, non-magnetic, electrically insulating material comprises one of a fluorinated Permalloy™ material and a fluorinated alloy material of any of nickel, iron, and cobalt. 
     
     
         5 . The magnetic device of claim, further comprising:
 an insulating layer formed over the fluorinated, non-magnetic, electrically insulating material.

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