Conductive nanoparticles

Abstract

Isolated conductive nanoparticles on a dielectric layer and methods of fabricating such isolated conductive nanoparticles provide charge storage units in electronic structures for use in a wide range of electronic devices and systems. The isolated conductive nanoparticles may be used as a floating gate in a flash memory. In an embodiment, conductive nanoparticles are deposited on a dielectric layer by a plasma-assisted deposition process such that each conductive nanoparticle is isolated from the other conductive nanoparticles to configure the conductive nanoparticles as charge storage elements.

1 . An apparatus comprising:
 a dielectric in an integrated circuit, the dielectric including a nanolaminate;   conductive nanoparticles on the dielectric such that each conductive nanoparticle is isolated from the other conductive nanoparticles, the conductive nanoparticles configured as charge storage elements; and   a capping dielectric disposed on the conductive nanoparticles.   
     
     
         2 . The apparatus of  claim 1 , wherein the conductive nanoparticles are configured in a non-planar arrangement. 
     
     
         3 . The apparatus of  claim 1 , wherein the conductive nanoparticles include metal nanoparticles. 
     
     
         4 . The apparatus of  claim 1 , wherein the conductive nanoparticles include nanoparticles of a conductive compound. 
     
     
         5 . The apparatus of  claim 1 , wherein the conductive nanoparticles include platinum nanoparticles, ruthenium nanoparticles, conductive ruthenium oxide nanoparticles, cobalt nanoparticles, or rhodium nanoparticles. 
     
     
         6 . An apparatus comprising:
 silicon oxide on a substrate in an integrated circuit;   conductive nanoparticles on the silicon oxide such that each conductive nanoparticle is isolated from the other conductive nanoparticles, the conductive nanoparticles including iridium, the conductive nanoparticles configured as charge storage elements; and   a capping dielectric disposed on the conductive nanoparticles.   
     
     
         7 . The apparatus of  claim 6 , wherein the capping dielectric includes silicon oxide. 
     
     
         8 . The apparatus of  claim 7 , wherein the conductive nanoparticles contact and are enclosed by silicon oxide. 
     
     
         9 . The apparatus of  claim 7 , wherein the substrate includes silicon on which the silicon oxide is disposed in contact with the silicon of the substrate. 
     
     
         10 . The apparatus of  claim 6 , wherein the conductive nanoparticles are arranged as charge storage elements for a flash memory. 
     
     
         11 . An apparatus comprising:
 a dielectric in an integrated circuit   conductive nanoparticles on the dielectric such that each conductive nanoparticle is isolated from the other conductive nanoparticles, the conductive nanoparticles including a conductive metal oxide, the conductive nanoparticles configured as charge storage elements; and   a capping dielectric disposed on the conductive nanoparticles.   
     
     
         12 . The apparatus of  claim 11 , wherein the conductive nanoparticles include iridium. 
     
     
         13 . The apparatus of  claim 12 , wherein the conductive nanoparticles contact and are enclosed by silicon oxide. 
     
     
         14 . The apparatus of  claim 13 , wherein the dielectric includes silicon oxide arranged as a tunneling oxide to the conductive nanoparticles. 
     
     
         15 . The apparatus of  claim 14 , wherein the dielectric, the conductive nanoparticles, and the capping dielectric are disposed in a memory device. 
     
     
         16 . The apparatus of  claim 11 , wherein the dielectric is a material having a dielectric constant greater than silicon dioxide. 
     
     
         17 . An apparatus comprising:
 a dielectric in an integrated circuit, the dielectric having a protrusion, the protrusion having sides extending vertically from a surface of the dielectric to a top of the protrusion; and   conductive nanoparticles on the dielectric with at least one of the conductive nanoparticles disposed on and contacting the top of the protrusion and at least one of the conductive nanoparticles disposed on and contacting each of the sides of the protrusion, each conductive nanoparticle isolated from the other conductive nanoparticles, the conductive nanoparticles configured as charge storage elements.   
     
     
         18 . The apparatus of  claim 17 , wherein the conductive nanoparticles include conductive metal oxide nanoparticles. 
     
     
         19 . The apparatus of  claim 18 , wherein the conductive nanoparticles include iridium. 
     
     
         20 . The apparatus of  claim 17 , wherein the apparatus includes a capping layer contacting the conductive nanoparticles and the dielectric, the dielectric and the capping layer substantially having a common composition. 
     
     
         21 . The apparatus of  claim 17 , wherein the conductive nanoparticles include platinum nanoparticles, ruthenium nanoparticles, conductive ruthenium oxide nanoparticles, cobalt nanoparticles, iridium, or rhodium nanoparticles. 
     
     
         22 . A method of forming an apparatus, the method comprising:
 forming a dielectric in an integrated circuit on a substrate;   forming, after forming the dielectric, conductive nanoparticles on the formed dielectric, the conductive nanoparticles formed by a plasma-assisted deposition process such that each conductive nanoparticle is isolated from the other conductive nanoparticles, wherein forming conductive nanoparticles includes forming iridium;   forming, after forming the conductive nanoparticles, a capping dielectric on and contacting the formed conductive nanoparticles and contacting the dielectric, the capping dielectric providing isolation from conductive elements; and   configuring the conductive nanoparticles as charge storage elements.   
     
     
         23 . The method of  claim 22 , wherein the forming conductive nanoparticles includes forming conductive metal oxide nanoparticles. 
     
     
         24 . The method of  claim 22 , wherein forming conductive nanoparticles on the dielectric by a plasma-assisted deposition process includes forming the conductive nanoparticles on the dielectric by plasma-enhanced atomic layer deposition. 
     
     
         25 . The method of  claim 22 , wherein forming conductive nanoparticles and forming the capping dielectric includes forming silicon oxide.