Methods of growing heterepitaxial single crystal or large grained semiconductor films and devices thereon

Abstract

A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor, which are vapor deposited at a fixed temperature on relatively inexpensive buffered substrates, such as glass. Such films could have widespread application in photovoltaic and display technologies.

1 . An electromagnetic device comprising:
 a substrate   a single crystal or large grained semiconductor film deposited onto the substrate by a process comprising holding the substrate at a constant temperature and vapor depositing the film from a eutectic alloy.   
     
     
         2 . The electromagnetic device of  claim 1 , further comprising a buffer layer between said semiconductor film and said substrate, wherein the buffer layer comprises a single crystal or textured film, and wherein the substrate comprises glass or metallic tape. 
     
     
         3 . The electromagnetic device of  claim 2 , wherein the buffer layer comprises a chemically inert ceramic film. 
     
     
         4 . The electromagnetic device of  claim 2 , wherein the buffer layer comprises MgO. 
     
     
         5 . The electromagnetic device of  claim 2 , wherein the buffer layer comprises Al 2 O 3 . 
     
     
         6 . The electromagnetic device of  claim 5 , wherein the semiconductor film is heteroepitaxially deposited. 
     
     
         7 . The electromagnetic device of  claim 2 , wherein the buffer layer comprises a ceramic film and said substrate comprises a glass substrate. 
     
     
         8 . The electromagnetic device of  claim 2 , wherein the buffer layer comprises of MgO and said substrate comprises a glass substrate. 
     
     
         9 . The electromagnetic device of  claim 1 , wherein the substrate is glass. 
     
     
         10 . The electromagnetic device of  claim 1 , wherein the semiconductor film comprises silicon, and the eutectic alloy comprises an aluminum-silicon eutectic. 
     
     
         11 . The electromagnetic device of claim  101  wherein the semiconductor film is deposited at a temperature above the eutectic temperature and below 650° C. 
     
     
         12 . The electromagnetic device of  claim 1 , wherein the eutectic alloy comprises a gold-silicon eutectic. 
     
     
         13 . The electromagnetic device of claim  121  wherein the semiconductor film is deposited at a temperature above the eutectic temperature and below 615° C.