Method of forming plating layer

Abstract

There is provided a method of forming a plating layer, the method including: forming a seed layer on a substrate; forming a pattern layer on the seed layer, the pattern layer formed of a thermoplastic resin and including openings; forming a plating layer on portions of the seed layer corresponding to the openings; and removing the pattern layer. This method ensures that the plating layer is formed with a sufficient thickness and the substrate, particularly, a ceramic substrate suffers minimal chemical damage during a plating process. Moreover, the plating layer is formed with a more uniform thickness.

1 . A method of forming a plating layer, the method comprising:
 forming a seed layer on a substrate;   forming a pattern layer on the seed layer, the pattern layer formed of a thermoplastic resin and including openings;   forming a plating layer on portions of the seed layer corresponding to the openings; and   removing the pattern layer.   
   
   
       2 . The method of  claim 1 , wherein the pattern layer is formed of one material selected from a group consisting of polyethylene, polyvinylidene fluoride, liquid crystal polymer and a combination thereof. 
   
   
       3 . The method of  claim 1 , wherein the pattern layer has a thickness of 20 to 30 μm. 
   
   
       4 . The method of  claim 1 , wherein the removing the pattern layer comprises heating the pattern layer. 
   
   
       5 . The method of  claim 4 , wherein the removing the pattern layer comprises heating the pattern layer at a temperature of 200 to 300° C. for 2 to 3 hours. 
   
   
       6 . The method of  claim 1 , wherein the seed layer comprises first and second layers, the first layer formed of one material selected from a group consisting of Ti, Cr, ZnO and a combination thereof, and the second layer formed on the first layer and containing Cu. 
   
   
       7 . The method of  claim 6 , wherein the first layer has a thickness of 0.05 to 0.3 μm. 
   
   
       8 . The method of  claim 6 , wherein the second layer has a thickness of 0.3 to 1 μm. 
   
   
       9 . The method of  claim 1 , wherein the forming a seed layer comprises performing one of sputtering and E-beam evaporation. 
   
   
       10 . The method of  claim 1 , wherein the forming a plating layer comprises performing electroplating. 
   
   
       11 . The method of  claim 10 , wherein the forming a seed layer on a substrate comprises forming the seed layer on an entire top surface of the substrate. 
   
   
       12 . The method of  claim 1 , wherein the forming a plating layer comprises forming a Cu layer, an Ni layer and an Au layer sequentially. 
   
   
       13 . The method of  claim 1 , wherein the substrate is a ceramic substrate having an internal electrode and a conductive via therein, the internal electrode and the conductive via electrically connected to the plating layer.