US2009292053A1PendingUtilityA1

Film-forming composition

Assignee: TOKYO OHKA KOGYO CO LTDPriority: Jul 14, 2006Filed: Jul 2, 2007Published: Nov 26, 2009
Est. expiryJul 14, 2026(expired)· nominal 20-yr term from priority
Inventors:Toshiro Morita
H10P 32/1408H10P 32/171H10P 32/19C08L 71/02C09D 171/02C08L 83/04C09D 183/00C09D 183/04C09D 183/16
48
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Claims

Abstract

A film-forming composition for use in a coating diffusion method, capable of diffusing a dopant at a higher concentration, and further capable of concomitantly forming a silica-based coating film is provided. A film-forming composition for constituting a diffusion film provided for diffusing a dopant element into a silicon wafer, the film-forming composition including: (A) a polymeric silicon compound; (B) an oxide of the dopant element, or a salt including the dopant element; and (C) porogene.

Claims

exact text as granted — not AI-modified
1 . A film-forming composition for constituting a diffusion film provided for diffusing a dopant element into a silicon wafer,
 the film-forming composition comprising: (A) a polymeric silicon compound; (B) an oxide of the dopant element, or a salt including the dopant element; and (C) porogene.   
     
     
         2 . The film-forming composition according to  claim 1  wherein the component (C) is a reducing agent for reducing the component (B). 
     
     
         3 . The film-forming composition according to  claim 1  further comprising (D) a solvent that can dissolve the polymeric silicon compound,
 wherein the component (C) is a high molecular organic compound which can be dissolved in the solvent.   
     
     
         4 . The film-forming composition according to  claim 1  wherein the component (C) is polyalkylene glycol. 
     
     
         5 . The film-forming composition according to  claim 1  wherein the component (C) is polypropylene glycol. 
     
     
         6 . The film-forming composition according to  claim 1  wherein the component (C) has a mass-average molecular weight of no less than 500. 
     
     
         7 . The film-forming composition according to  claim 1  wherein the dopant element is a 13 group element or a 15 group element. 
     
     
         8 . The film-forming composition according to  claim 1  wherein the dopant element is boron or phosphorus. 
     
     
         9 . A film-forming composition for constituting a diffusion film provided for diffusing a dopant element into a silicon wafer,
 the film-forming composition comprising: (A) a polymeric silicon compound; (B) an oxide of the dopant element, or a salt including the dopant element; and (E) a reducing agent that reduces the component (B).

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