Apparatus and method for high-throughput atomic layer deposition

Abstract

Atomic layer deposition apparatus for depositing a film in a continuous fashion. The apparatus includes a process tunnel, extending in a transport direction and bounded by at least a first and a second wall. The walls are mutually parallel and allow a flat substrate to be accommodated there between. The apparatus further includes a transport system for moving a train of substrates or a continuous substrate in tape form, through the tunnel. At least the first wall of the process tunnel is provided with a plurality of gas injection channels that, viewed in the transport direction, are connected successively to a first precursor gas source, a purge gas source, a second precursor gas source and a purge gas source respectively, so as to create a tunnel segment that—in use—comprises successive zones containing a first precursor gas, a purge gas, a second precursor gas and a purge gas, respectively.

1 . An atomic layer deposition apparatus, comprising:
 a process tunnel, extending in a transport direction and bounded by at least a first and a second wall, said walls being mutually parallel and spaced apart so as to allow a substantially flat substrate, oriented parallel to the walls, to be accommodated therebetween;   a transport system for carrying and moving a train of said substrates or a continuous substrate in tape form, from an entrance of the tunnel, along the transport direction, to an exit thereof;   
     wherein at least the first wall of the process tunnel is provided with a plurality of gas injection channels, which channels are disposed in a spaced apart manner along the transport direction and which channels, viewed in the transport direction, are connected successively to a first precursor gas source, a purge gas source, a second precursor gas source and a purge gas source respectively, so as to create a tunnel segment that—in use—comprises successive zones containing a first precursor gas, a purge gas, a second precursor gas and a purge gas, respectively, and 
     wherein two or more of such segments are disposed behind one another in the transport direction. 
   
   
       2 . The atomic layer deposition apparatus according to  claim 1 , wherein both the first and the second tunnel wall are provided with a plurality of gas injection channels, which channels are disposed in a spaced apart manner along the transport direction. 
   
   
       3 . The atomic layer deposition apparatus according to  claim 1 , wherein the first and the second wall are spaced apart such that a gap between a substrate accommodated between the two walls and each of the walls measures 2 mm or less. 
   
   
       4 . The atomic layer deposition apparatus according to  claim 3 , wherein the first and the second wall are spaced apart such that the gap between a substrate accommodated between the two walls and each of the walls measures 1 mm or less. 
   
   
       5 . The atomic layer deposition apparatus according to  claim 4 , wherein the first and the second wall are spaced apart such that the gap between a substrate accommodated between the two walls and each of the walls is in the range of 0.15-0.25 mm. 
   
   
       6 . The atomic layer deposition apparatus according to  claim 1 , wherein the first and second tunnel wall are oriented substantially horizontally, and wherein the first tunnel wall is located above the second tunnel wall. 
   
   
       7 . The atomic layer deposition apparatus according to  claim 2 , wherein the transport system comprises the plurality of gas injection channels, disposed in the second tunnel wall, that—in use—inject gas into the tunnel to provide a gas bearing for supporting the substrates. 
   
   
       8 . The atomic layer deposition apparatus according to  claim 2 , wherein the gas injection channels in the second tunnel wall are connected to a source of inert gas. 
   
   
       9 . The atomic layer deposition apparatus according to  claim 2 , wherein the first and second tunnel wall are symmetrical in that opposite gas injection channels are connected to gas sources of substantially the same gas composition. 
   
   
       10 . The atomic layer deposition apparatus according to  claim 1 , wherein at least one gas injection channel is configured to inject gas into the process tunnel in a direction having a positive component in the transport direction. 
   
   
       11 . The atomic layer deposition apparatus according to  claim 10 , wherein said at least one injection channel is connected to a purge gas source. 
   
   
       12 . The atomic layer deposition apparatus according to  claim 1 , wherein the process tunnel can accommodate two or more parallel trains of substrates to be processed. 
   
   
       13 . The atomic layer deposition apparatus according to  claim 1 , wherein the transport system comprises one or more drive pins configured to engage an individual substrate at its circumferential edge, and to move said substrate into the transport direction through the process tunnel. 
   
   
       14 . The atomic layer deposition apparatus according to  claim 1 , wherein the process tunnel is provided with at least one end portion having an enlarged gap between the tunnel walls. 
   
   
       15 . The atomic layer deposition apparatus according to  claim 14 , wherein the gas injection channels in the at least one end portion of the process tunnel are connected to a nitrogen (N 2 ) or helium source (He). 
   
   
       16 . The atomic layer deposition apparatus according to  claim 1 , wherein the first precursor is tri-methyl aluminum (Al(CH 3 )) and wherein the second precursor is water (H 2 O). 
   
   
       17 . The atomic layer deposition apparatus according to  claim 1 , wherein nitrogen (N 2 ) is used as an inert and/or purge gas. 
   
   
       18 . The atomic layer deposition apparatus according to  claim 1 , wherein the number of segments corresponds with a desired film thickness. 
   
   
       19 . The atomic layer deposition apparatus according to  claim 1 , comprising one or more segments of a first configuration for injecting a first combination of precursor gases, and one or more segments of a second configuration for injecting a second combination of precursor gases. 
   
   
       20 . Method for growing a thin film on a substrate, comprising:
 providing a process tunnel that extends longitudinally in a transport direction from an entrance to an exit, and that is capable of accommodating one or more substantially flat substrates;   bringing about a longitudinal division of the process tunnel into two or more functional segments, wherein each segment comprises at least four laterally extending gas zones that successively contain a first precursor gas, a purge gas, a second precursor gas and a purge gas;   moving a substrate through the process tunnel into the transport direction, such that the substrate is successively subjected to the gases in the successive gas zones, and an atomic layer is deposited onto the substrate when it passes by all at least four zones of a single segment.   
   
   
       21 . The atomic layer deposition apparatus according to  claim 2 , wherein the first and second tunnel wall are oriented substantially horizontally, and wherein the first tunnel wall is located above the second tunnel wall.