Detection of seed layers on a semiconductor device

Abstract

A device and/or method which detects a seed layer and a device and/or method of forming layers on a semiconductor device. The device which forms layers on the semiconductor device may include a metal layer forming unit (which forms a metal layer on a wafer), a copper seed layer forming unit (which forms a copper seed layer on the metal layer), a wafer alignment device (which includes a wafer alignment unit which aligns the wafer to a predetermined position), a copper seed layer detecting unit (which is positioned above the wafer alignment unit to detect the copper seed layer formed on the wafer), and a plating unit (which forms a copper interconnection layer on the copper seed layer).

1 - 23 . (canceled) 
   
   
       24 . An apparatus comprising:
 an annular frame located above a wafer with a shape corresponding to an edge of the wafer;   a sensor frame coupled to the annular frame; and   a detection unit coupled to the sensor frame, which is configured to detect a seed layer on the wafer,   wherein the detecting unit comprises an imaging device which is configured to photograph a wafer.   
   
   
       25 . The apparatus of  claim 24 , wherein:
 the sensor frame is attached to a guide rail; and   the guide rail is located at an inner portion of the annular frame.   
   
   
       26 . The apparatus of  claim 25 , wherein the guide rail is a groove at the inner portion of the annular frame. 
   
   
       27 . The apparatus of  claim 24 , wherein the sensor frame has an elongated opening and the detecting unit is installed in the elongated opening. 
   
   
       28 . The apparatus of  claim 24 , wherein the detecting unit comprises a light emitting diode configured to irradiate light onto the wafer and a light receiving diode configured to detect the light reflected from the wafer. 
   
   
       29 . The apparatus of  claim 24 , wherein:
 a support bar is coupled to the annular frame;   the support bar allows the annular frame to be spaced apart from the wafer;   a coupling member is coupled to the support bar; and   a support plate is coupled to the coupling member.   
   
   
       30 . The apparatus of  claim 29 , wherein the coupling member comprises a coupling slot coupled to the support plate. 
   
   
       31 . The apparatus of  claim 24 , comprising a central processing unit coupled to the detection unit which is configured to process a detection signal transmitted from the detection unit. 
   
   
       32 . The apparatus of  claim 24 , wherein the detection unit comprises:
 a light irradiation unit which is configured to irradiate light onto a top surface of the wafer;   a lens group which is configured to focus light to allow the detection unit to perform micro-photographing; and   an optoelectronic device which is configured to convert an optical image into an electric signal.   
   
   
       33 . A method comprising:
 moving a sensor frame into a position to inspect a wafer, wherein the sensor frame is coupled to an annular frame, wherein the annular frame has a shape corresponding to an edge of the wafer, and wherein the annular frame is located above the wafer;   detecting a seed layer formed on the wafer using a detection unit coupled to the sensor frame;   generating a detection signal using the detection unit; and   determining if the seed layer formed on the wafer has defects based on the detection signal,   wherein the detection unit photographs the wafer.   
   
   
       34 . The method of  claim 33 , wherein the detection unit detects light reflected from the wafer.