Pixel circuit substrate, liquid crystal display apparatus, method of manufacturing the same and projection display apparatus

Abstract

A pixel circuit substrate includes a first interlayer insulating film which is made of an inorganic material at least in a source and drain regions of a thin film transistor. A contact hole is formed in an area above the source and drain regions of a thin film transistor in the first interlayer insulating film. A wiring layer is formed on the first interlayer insulating film, extends to an inner wall and a bottom surface of the contact hole. On a top surface of the wiring layer is formed a recess reflecting the shape of a contact hole. A second interlayer insulating film is formed on the wiring layer, embedded in the recess and has a flat top surface in an area above the thin film transistor. A storage capacitor on the second interlayer insulating film is disposed in the area above the thin film transistor.

1 . A method of manufacturing a liquid crystal display apparatus comprising steps of:
 fabricating a pixel circuit substrate;   fabricating a counter substrate; and   
     connecting said pixel circuit substrate and said counter substrate together so as to be opposite to each other and disposing a liquid crystal layer between said pixel circuit substrate and said counter substrate, 
     wherein the step of fabricating a pixel circuit substrate comprises the steps of:
 forming a thin film transistor formed on said substrate, 
 forming a first interlayer insulating film which is made of an inorganic material at least in source and drain regions of said thin film transistor, 
 
     forming a contact hole in an area of said first interlayer insulating film immediately above said source and drain regions of said thin film transistor, 
     forming a wiring layer on said first interlayer insulating film in such a manner as to extend to an inner wall and a bottom surface of said contact hole, said wiring layer being connected to said source and drain regions, 
     forming a silicon oxide film by an O 3 -alkoxysilane reaction by a CVD method thereby to embed an interior of a recess which is formed on a top surface of said wiring layer, the silicon oxide film reflecting the shape of said contact hole and forming a second interlayer insulating film in such a manner as to be disposed on said first interlayer insulating film, and 
     forming a storage capacitor in the area of said second interlayer insulating film immediately above said thin film transistor. 
   
   
       2 . A method of manufacturing a liquid crystal display apparatus comprising:
 fabricating a pixel circuit substrate;   fabricating a counter substrate; and   connecting said pixel circuit substrate and said counter substrate together so as to he opposite to each other and disposing a liquid crystal layer between said pixel circuit substrate and said counter substrate,   
     wherein the step of fabricating a pixel circuit substrate comprises:
 forming a thin film transistor formed on said substrate, 
 
     forming a first interlayer insulating film which is made of an inorganic material at least in source and drain regions of said thin film transistor, 
     forming a contact hole in an area of said first interlayer insulating film immediately above said source and drain regions of said thin film transistor, 
     forming a wiring layer on said first interlayer insulating film in such a manner as to extend to an inner wall and a bottom surface of said contact hole, and in such a manner that said wiring layer is connected to said source and drain regions, 
     forming a silicon oxide film by an O 3 -hexamethyldisiloxane reaction by a CVD method thereby to embed an interior of a recess which is formed on a top surface of said wiring layer and so that the silicon oxide film reflects a shape of said contact hole, and forming a second interlayer insulating film in such a manner as to be disposed on said first Interlayer insulating film, and 
     forming a storage capacitor in the area of said second interlayer insulating film immediately above said thin film transistor. 
   
   
       3 . The method of manufacturing a liquid crystal display apparatus according to  claim 1 , wherein in said step of forming of a second interlayer insulating film, as the CVD method a normal pressure CVD method is used and the O 3  concentration in O 2  is in a range of 100 to 200 g/m 3 . 
   
   
       4 . The method of manufacturing a liquid crystal display apparatus according to  claim 2 , wherein in said step of forming of a second interlayer insulating film, as the CVD method a normal pressure CVD method is used and the O 3  concentration in O 2  is in a range of 100 to 200 g/m 3 . 
   
   
       5 . The method of manufacturing a liquid crystal display apparatus according to  claim 3 , further comprising a step of forming another silicon film by an O 3 -alkoxysilane reaction by a normal pressure CVD method in which the O 3  concentration in O 2  is in a range of 5 to 20 g/m 3  before the formation of said second interlayer insulating film. 
   
   
       6 . The method of manufacturing a liquid crystal display apparatus according to  claim 4 , further comprising a step of forming another silicon film by an O 3 -alkoxysilane reaction by a normal pressure CVD method in which the O 3  concentration in O 2  is in a range of 5 to 20 g/m 3  before the formation of said second interlayer insulating film. 
   
   
       7 . The method of manufacturing a liquid crystal display apparatus according to  claim 1 , further comprising a step of polishing a top surface of a portion of said second interlayer insulating film corresponding to the area immediately above said thin film transistor between said step of forming a second interlayer insulating film and said step of forming a storage capacitor. 
   
   
       8 . The method of manufacturing a liquid crystal display apparatus according to  claim 2 , further comprising a step of polishing a top surface of a portion of said second interlayer insulating film corresponding to the area immediately above said thin film transistor between said step of forming a second interlayer insulating film and said step of forming a storage capacitor. 
   
   
       9 . The method of manufacturing a liquid crystal display apparatus according to  claim 1 , wherein when the unit area of each pixel is denoted by X and a total value of an effective area of a contact hole in each pixel is denoted by Y, the value of the ratio (Y/X) is equal to or more than 0.01. 
   
   
       10 . The method of manufacturing a liquid crystal display apparatus according to  claim 2 , wherein when the unit area of each pixel is denoted by X and a total value of an effective area of a contact hole in each pixel is denoted by Y, the value of the ratio (Y/X) is equal to or more than 0.01.