Heat radiation structure of semiconductor device, and manufacturing method thereof
Abstract
The invention of the present application provides a heat radiation structure of a semiconductor device, comprising a substrate having, on a surface thereof, a first area on which the semiconductor device is mounted, and a second area which surrounds the first area, and the semiconductor device which has a first surface and a second surface opposite to the first surface and is formed with a plurality of terminals provided on the first surface, wherein the semiconductor device is mounted on the substrate in such a manner that the first surface is opposite to the surface of the substrate, and wherein a first heat radiating film is formed on the second area of the substrate, and a second heat radiating film is formed on the second surface of the semiconductor device with being spaced away from the first heat radiating film.
Claims
exact text as granted — not AI-modified1 - 20 . (canceled)
21 . A method of manufacturing a heat radiation structure, comprising the steps of:
preparing a substrate; mounting a semiconductor device on the substrate; and supplying a liquid heat radiating material to thereby form a heat radiating film on the substrate so as to cover an upper surface of the semiconductor device and expose side surfaces thereof.
22 . A method according to claim 21 , wherein the heat radiating material supplying step has a step for spraying the liquid heat radiating material onto the substrate and the semiconductor device in mist form.
23 . A method according to claim 21 , wherein the heat radiating film is formed by heating the supplied heat radiating material.
24 . A method according to claim 21 , wherein the heat radiating material is supplied from above the substrate.
25 . A method according to claim 21 , wherein the heat radiating material is liquid ceramics.
26 . A method of manufacturing a heat radiation structure, comprising the steps of:
preparing a substrate; mounting a semiconductor device on the substrate; and supplying liquid ceramics to thereby form a heat radiating film on each of the semiconductor device and the substrate exposed from the semiconductor device.
27 - 32 . (canceled)Join the waitlist — get patent alerts
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