US2009280604A1PendingUtilityA1

Heat radiation structure of semiconductor device, and manufacturing method thereof

Assignee: OKI SEMICONDUCTOR CO LTDPriority: Apr 16, 2003Filed: Jul 15, 2009Published: Nov 12, 2009
Est. expiryApr 16, 2023(expired)· nominal 20-yr term from priority
Inventors:Takashi Noguchi
H10W 72/9415H10W 72/07251H10W 72/923H10W 72/922H10W 72/877H10W 72/20H10W 40/255H10W 70/656H10W 40/10
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Claims

Abstract

The invention of the present application provides a heat radiation structure of a semiconductor device, comprising a substrate having, on a surface thereof, a first area on which the semiconductor device is mounted, and a second area which surrounds the first area, and the semiconductor device which has a first surface and a second surface opposite to the first surface and is formed with a plurality of terminals provided on the first surface, wherein the semiconductor device is mounted on the substrate in such a manner that the first surface is opposite to the surface of the substrate, and wherein a first heat radiating film is formed on the second area of the substrate, and a second heat radiating film is formed on the second surface of the semiconductor device with being spaced away from the first heat radiating film.

Claims

exact text as granted — not AI-modified
1 - 20 . (canceled) 
   
   
       21 . A method of manufacturing a heat radiation structure, comprising the steps of:
 preparing a substrate;   mounting a semiconductor device on the substrate; and   supplying a liquid heat radiating material to thereby form a heat radiating film on the substrate so as to cover an upper surface of the semiconductor device and expose side surfaces thereof.   
   
   
       22 . A method according to  claim 21 , wherein the heat radiating material supplying step has a step for spraying the liquid heat radiating material onto the substrate and the semiconductor device in mist form. 
   
   
       23 . A method according to  claim 21 , wherein the heat radiating film is formed by heating the supplied heat radiating material. 
   
   
       24 . A method according to  claim 21 , wherein the heat radiating material is supplied from above the substrate. 
   
   
       25 . A method according to  claim 21 , wherein the heat radiating material is liquid ceramics. 
   
   
       26 . A method of manufacturing a heat radiation structure, comprising the steps of:
 preparing a substrate;   mounting a semiconductor device on the substrate; and   supplying liquid ceramics to thereby form a heat radiating film on each of the semiconductor device and the substrate exposed from the semiconductor device.   
   
   
       27 - 32 . (canceled)

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