Image sensor and fabricting method thereof

Abstract

An image sensor includes the steps of forming a sublayer including a photodiode, a transistor and a metal line on a substrate, forming a pattern layer on the sublayer to be overlapped with the photodiode and to having a curved surface, and forming a combined color filter and microlens on the pattern layer to have a curved surface.

1 . An image sensor comprising:
 a substrate;   a sublayer on the substrate, the sublayer including a photodiode, a transistor and a metal line;   a pattern layer on the sublayer to be overlapped with the photodiode, the pattern layer having a curved surface; and   a combined color filter and microlens on the pattern layer, the combined color filter and microlens having a curved surface.   
   
   
       2 . The image sensor of  claim 1 , wherein the combined color filter and microlens is formed of a photosensitive resin. 
   
   
       3 . The image sensor of  claim 2 , wherein the photosensitive resin enables a light of a specific wavelength to be selectively transmitted to the photodiode. 
   
   
       4 . The image sensor of  claim 1 , wherein the combined color filter and microlens comprises a red combined color filter and microlens, a blue combined color filter and microlens and a green combined color filter and microlens. 
   
   
       5 . The image sensor of  claim 1 , further comprising a planarizing layer on the combined color filter and microlens. 
   
   
       6 . The image sensor of  claim 1 , further comprising a condensing lens over the combined color filter and microlens. 
   
   
       7 . The image sensor of  claim 1 , wherein the pattern layer is spaced apart form a neighbor pattern layer by 0.51˜5 μm. 
   
   
       8 - 13 . (canceled) 
   
   
       14 . The image sensor of  claim 1 , further comprising a condensing lens formed on the planarizing layer to be overlapped with the combined color filter and microlens.