US2009278213A1PendingUtilityA1

Electrode arrays and methods of fabricating the same using printing plates to arrange particles in an array

Assignee: IBMPriority: May 8, 2008Filed: May 8, 2008Published: Nov 12, 2009
Est. expiryMay 8, 2028(~1.8 yrs left)· nominal 20-yr term from priority
H10W 72/9415H10W 72/07251H10W 72/01951H10W 72/01225H10W 72/01204H10W 72/932H10W 72/253H10W 72/252H10W 72/242H10W 72/29H10W 72/20H10W 72/012G01N 33/54366
48
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Claims

Abstract

Electrode arrays and methods of fabricating the same using a printing plate to arrange conductive particles in alignment with an array of electrodes are provided. In one embodiment, a semiconductor device comprises: a semiconductor topography comprising an array of electrodes disposed upon a semiconductor substrate; a dielectric layer residing upon the semiconductor topography; and at least one conductive particle disposed in or on the dielectric layer in alignment with at least one of the array of electrodes.

Claims

exact text as granted — not AI-modified
1 . A semiconductor device comprising:
 a semiconductor topography comprising an array of electrodes disposed upon a semiconductor substrate;   a dielectric layer residing upon the semiconductor topography; and   at least one conductive particle disposed in or on the dielectric layer in alignment with at least one of the array of electrodes.   
   
   
       2 . The semiconductor device of  claim 1 , wherein the at least one conductive particle has a grain size dimension of less than or equal to about 100 micrometers. 
   
   
       3 . The semiconductor device of  claim 2 , wherein the at least one conductive particle has a grain size dimension of less than or equal to about 100 nanometers 
   
   
       4 . The semiconductor device of  claim 1 , wherein the at least one conductive particle is a plurality of conductive particles in alignment with and in electrical communication with the array of electrodes. 
   
   
       5 . The semiconductor device of  claim 1 , wherein the at least one conductive particle comprises Cu, Au, Ag, Pt, Ir, W, Ta, Pd, Al, Ni, Co, a conductive oxide, or a combination comprising at least one of the foregoing. 
   
   
       6 . The semiconductor device of  claim 1 , wherein the dielectric layer has a substantially planar surface and comprises a polymer. 
   
   
       7 . The semiconductor device of  claim 1 , wherein the at least one conductive particle is substantially cube shaped or spherical shaped. 
   
   
       8 . The semiconductor device of  claim 1 , wherein the at least one conductive particle is functionalized with an inorganic ion, a protein, an enzyme, a nucleic acid, a vitamin, an antibody, a steroid, a hormone, an aminoacid, or a combination comprising at least one of the foregoing. 
   
   
       9 . The semiconductor device of  claim 1 , wherein each electrode in the array of electrodes has a lateral dimension of less than or equal to about 1000 micrometers. 
   
   
       10 . A method of fabricating a semiconductor device, comprising:
 contacting a face of a printing plate with a suspension comprising conductive particles to arrange the particles at predefined positions on the face of the printing plate; and   contacting a dielectric layer residing upon an array of electrodes disposed upon a semiconductor substrate with the face of the printing plate to transfer the conductive particles to a position in or on the dielectric layer.   
   
   
       11 . The method of  claim 10 , wherein the conductive particles have a grain size dimension of less than or equal to about 100 micrometers. 
   
   
       12 . The method of  claim 10 , wherein the conductive particles have a grain size dimension of less than or equal to about 100 nanometers. 
   
   
       13 . The method of  claim 10 , wherein the predefined positions on the face of the printing plate comprise recessed features, protruding structures, binding sites, or a combination comprising at least one of the foregoing. 
   
   
       14 . The method of  claim 10 , wherein the conductive particles are aligned to the array of electrodes during said contacting of the dielectric layer with the face of the printing plate. 
   
   
       15 . The method of  claim 10 , wherein the conductive particles comprises Cu, Au, Ag, Pt, Ir, W, Ta, Pd, Al, Ni, Co, a conductive oxide, or a combination comprising at least one of the foregoing. 
   
   
       16 . The method of  claim 10 , wherein the conductive particles are substantially cube shaped or spherical shaped. 
   
   
       17 . The method of  claim 10 , wherein the dielectric layer comprises a polymer. 
   
   
       18 . The method of  claim 10 , wherein the dielectric layer is planarized prior to being contacted with the face of the printing plate. 
   
   
       19 . The method of  claim 10 , wherein the conductive particles are functionalized with an inorganic ion, a protein, an enzyme, a nucleic acid, a vitamin, an antibody, a steroid, a hormone, an aminoacid, or a combination comprising at least one of the foregoing. 
   
   
       20 . The method of  claim 10 , wherein each electrode in the array of electrodes has a lateral dimension of less than or equal to about 1000 micrometers.

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