US2009277382A1PendingUtilityA1

Semiconductor manufacturing apparatus

Assignee: HITACHI INT ELECTRIC INCPriority: May 9, 2008Filed: Mar 18, 2009Published: Nov 12, 2009
Est. expiryMay 9, 2028(~1.8 yrs left)· nominal 20-yr term from priority
H10P 14/69215H10P 14/6687H10P 14/6339H10P 14/6336H10P 76/405C23C 16/042C23C 16/402H10P 76/204
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Claims

Abstract

Provided is a semiconductor manufacturing apparatus, which is capable of realizing fine-pitch patterns and thus improving stabilization of patterning precision. The semiconductor manufacturing apparatus comprises: a photoresist processing unit for forming a photoresist pattern in a predetermined region on a substrate to which a predetermined process is applied; and a substrate processing unit for forming a thin film on the surface of at least the photoresist pattern.

Claims

exact text as granted — not AI-modified
1 . A semiconductor manufacturing apparatus, comprising:
 a photoresist processing unit for forming a photoresist pattern in a predetermined region on a substrate to which a predetermined process is applied; and   a substrate processing unit for forming a thin film on the surface of at least the photoresist pattern.   
     
     
         2 . The semiconductor manufacturing apparatus of  claim 1 , wherein the photoresist processing unit comprises:
 a first photoresist processing unit for forming a first photoresist pattern in the predetermined region on the substrate to which the predetermined process is applied; and   a second photoresist processing unit for forming a second photoresist pattern in a region where the first photoresist pattern is not formed.   
     
     
         3 . The semiconductor manufacturing apparatus of  claim 1 , wherein the substrate processing unit comprises:
 a processing chamber for processing the substrate;   a material supply unit for supplying a Si material, an oxidation material, and a catalyst into the processing chamber;   a heating unit for heating the substrate; and   a controller for controlling at least the material supply unit and the heating unit,   wherein the controller controls the heating unit and the material supply unit to heat the substrate to processing temperature lower than a first photoresist deformation temperature, and to alternately supply the Si material and the catalyst, and the oxidation material and the catalyst, into the processing chamber, and repeat the alternate supply a plurality of times.

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