Metal-Insulator-Metal Capacitor

Abstract

The present invention provides a metal-insulator-metal capacitor, which comprises a semiconductor substrate; an interlayer dielectric layer disposed on the semiconductor substrate; and an insulation trench and two metal trenches all running through the interlayer dielectric layer and allowing the semiconductor substrate to be exposed; wherein the metal trenches being located on each side of the insulation trench and sharing a trench wall with the insulation trench respectively, the insulation trench being filled with insulation material as an insulation structure, the metal trenches being filled with metal material as electrodes of the capacitor.

1 . A metal-insulator-metal capacitor, comprising
 a semiconductor substrate;   an interlayer dielectric layer disposed on the semiconductor substrate; and   an insulation trench and two metal trenches all running through the interlayer dielectric layer and allowing the semiconductor substrate to be exposed;   wherein the metal trenches being located on each side of the insulation trench and sharing a trench wall with the insulation trench respectively, the insulation trench being filled with insulation material to form an insulation structure, the metal trenches being filled with metal material to form electrodes of the capacitor.   
   
   
       2 . The metal-insulator-metal capacitor as claimed in  claim 1 , wherein the critical dimension of the insulation structure is in a range of 60 nm˜180 nm. 
   
   
       3 . The metal-insulator-metal capacitor as claimed in  claim 1 , wherein the insulation material comprises a high-k material. 
   
   
       4 . The metal-insulator-metal capacitor as claimed in  claim 3 , wherein the high-k material is selected from the group consisting of tantalum oxide (Ta 2 O 5 ), hafnium oxide (HfO 2 ), zirconia (ZrO 2 ), titanium oxide (TiO 2 ), hafnium silicate (HfSiO), alumina (Al 2 O 3 ), barium strontium titanate (BST) and platinum zirconium titanate (PZT). 
   
   
       5 . The metal-insulator-metal capacitor as claimed in  claim 1 , wherein the critical dimension of the electrode is in a range of 100 nm˜500 nm. 
   
   
       6 . The metal-insulator-metal capacitor as claimed in  claim 1 , wherein the metal material comprises copper or aluminum copper alloy.