Semiconductor module having an interconnection structure

Abstract

In a method for manufacturing a semiconductor module, a metal layer is formed on a support substrate. Then, first conductive posts and a first insulating layer are formed on the metal layer. The first insulating layer surrounds the sides of the first conductive posts. Then, second conductive posts are formed above the first conductive posts. The second conductive posts are electrically connected to the first conductive posts. Then, a second insulating layer is formed so as to cover the second conductive posts. The second insulating layer is made of adhesive resin. Finally, a semiconductor device is adhered to the second conductive posts by the second insulating layer while a gap between the first semiconductor device and the first insulating layer is sealed by the second insulating layer.

1 . A semiconductor module comprising:
 an interconnection structure including first and second conductive posts electrically connected to each other on front and back surfaces, respectively, of said connection structure, and first and second insulating layers surrounding sides of said first and second conductive poles, respectively, said second insulating layer being made of adhesive resin;   a first semiconductor device adhered to said second conductive posts by said second insulating layer so that a gap between said first semiconductor device and said interconnection structure is sealed by said second insulating layer.   
     
     
         2 . The semiconductor module as set forth in  claim 1 , further comprising:
 a metal layer formed on the back surface of said interconnection structure; and   a support substrate formed on said metal layer.   
     
     
         3 . The semiconductor module as set forth in  claim 1 , further comprising external electrodes on at least a part of said first conductive posts. 
     
     
         4 . The semiconductor module as set forth in  claim 1 , wherein said first insulating layer is made of adhesive resin, and said semiconductor module further comprises a second semiconductor device adhered to a part of said first conductive posts by said first insulating layer so that a gap between said second semiconductor device and said interconnection structure is sealed by said first insulating layer. 
     
     
         5 . The semiconductor module as set forth in  claim 1  further comprising a build-up interconnection structure on said first conductive posts and said first insulating layer. 
     
     
         6 . The semiconductor module as set forth in  claim 5 , further comprising external electrodes on said build-up interconnection structure.