Solid-state image pickup device

Abstract

A solid-state image pickup device is provided which includes a substrate; a transistor formed on the substrate; a photoelectric conversion element including a first electrode connected to a drain or a source of the transistor, a semiconductor layer stacked on the first electrode, and a second electrode stacked on the semiconductor layer; an insulating layer disposed on the second electrode; and a bias line formed on the insulating layer to be connected to the second electrode, in which the insulating layer contains at least an inorganic insulating film, and the bias line is connected to the second electrode via a contact hole formed in the insulating layer, and a side surface of the semiconductor layer is in contact with the inorganic insulating film.

1 . A solid-state image pickup device comprising:
 a substrate;   a transistor formed on the substrate;   a photoelectric conversion element including a first electrode connected to a drain or a source of the transistor, a semiconductor layer stacked on the first electrode>and a second electrode stacked on the semiconductor layer;   an insulating layer disposed on the second electrode; and   a bias line formed on the insulating layer to be connected to the second electrode,   wherein the insulating layer contains at least an inorganic insulating film, and   wherein the bias line is connected to the second electrode via a contact hole formed in the insulating layer, and a side surface of the semiconductor layer is in contact with the inorganic insulating film.   
   
   
       2 . The solid-state image pickup device according to  claim 1 , wherein the semiconductor layer is a stacked layer of a plurality of semiconductor films including at least a P-type semiconductor film and an N-type semiconductor film. 
   
   
       3 . The solid-state image pickup device according to  claim 2 ,
 wherein the first electrode is connected to the N-type semiconductor film, and   wherein the second electrode is connected to the P-type semiconductor film.   
   
   
       4 . The solid-state image pickup device according to  claim 1 , further comprising a top protection layer that is provided on the insulating layer,
 wherein the bias line is covered with the top protection layer.   
   
   
       5 . A solid-state image pickup device comprising:
 a substrate;   a transistor formed on the substrate;   a photoelectric conversion element including a first electrode connected to a drain or a source of the transistor, a semiconductor layer stacked on the first electrode, and a second electrode stacked on the semiconductor layer;   an upper insulating film disposed on the second electrode; and   a bias line formed on the upper insulating film to be connected to the second electrode,   wherein the first electrode is connected to the drain or the source on a lower side than the first electrode, and the bias line and the second electrode are connected to each other via a contact hole formed in the upper insulating film.   
   
   
       6 . The solid-state image pickup device according to  claim 5 , wherein the first electrode is electrically connected to the drain or the source by at least a portion thereof overlapping with an upper surface of the drain or the source of the transistor. 
   
   
       7 . The solid-state image pickup device according to  claim 5 , wherein the upper insulating film contains an inorganic insulating film. 
   
   
       8 . A solid-state image pickup device comprising:
 a substrate;   a transistor formed on the substrate;   a photoelectric conversion element including a first electrode connected to a drain or a source of the transistor, a semiconductor layer stacked on the first electrode, and a second electrode stacked on the semiconductor layer; and   a bias line connected to the second electrode,   wherein a lower insulating film is formed between the drain or the source and the first electrode, and   wherein the first electrode is electrically connected to the drain or the source by overlapping with an upper surface of the drain or the source within a contact hole formed in the lower insulating film.   
   
   
       9 . The solid-state image pickup device according to  claim 8 , wherein the lower insulating film contains an inorganic insulating film.