Fin mask and method for fabricating saddle type fin using the same

Abstract

A fin mask for forming saddle type fins in each of active regions formed in an island shape having a certain size with a major axis and a minor axis includes a first fin mask of a line type, and a second fin mask of an island type, wherein the first fin mask and the second fin mask in combination expose saddle type fin regions and cover ends of the neighboring active regions along the major axis.

1 . A fin mask for forming saddle type fins in each of active regions formed in an island shape having a certain size with a major axis and a minor axis, the fin mask comprising:
 a first fin mask of a line type; and   a second fin mask having openings,   wherein the first fin mask and the second fin mask in combination expose saddle type fin regions and cover ends of the neighboring active regions along the major axis.   
     
     
         2 . The fin mask of  claim 1 , wherein the openings of the second fin mask are formed in an island shape, the island shape including a jigsaw puzzle shape. 
     
     
         3 . A method for fabricating a saddle type fin, the method comprising:
 providing a substrate defining at least two active regions that have neighboring ends in a major axis;   forming an etch barrier pattern comprising a first fin mask and a second fin mask over the substrate, wherein the first fin mask exposes saddle type fin regions in a line pattern, and wherein the second fin mask covers the neighboring ends of the active regions and exposes the saddle type fin regions in an island pattern comprising a jigsaw puzzle shape; and   etching the saddle type fin regions to form saddle type fins in a local damascene structure.   
     
     
         4 . The method of  claim 3 , wherein forming the etch barrier pattern comprises forming an amorphous carbon pattern. 
     
     
         5 . The method of  claim 4 , wherein forming the amorphous carbon pattern comprises:
 forming an amorphous carbon layer;   forming a dielectric anti-reflective coating (DARC) layer over the amorphous carbon layer;   forming a polysilicon layer over the DARC layer;   etching the polysilicon layer using the first fin mask;   etching the DARC layer using the second fin mask; and   etching the amorphous carbon layer using the DARC layer.   
     
     
         6 . The method of  claim 4 , wherein forming the amorphous carbon pattern comprises:
 forming an amorphous carbon layer;   forming a dielectric anti-reflective coating (DARC) layer over the amorphous carbon layer;   forming a polysilicon layer over the DARC layer;   etching the polysilicon layer using the second fin mask;   etching the DARC layer using the first fin mask; and   etching the amorphous carbon layer using the DARC layer.