US2009263955A1PendingUtilityA1
GaN single crystal substrate and method of making the same
Assignee: SUMITOMO ELECTRIC INDUSTRIESPriority: Oct 30, 1997Filed: Mar 10, 2009Published: Oct 22, 2009
Est. expiryOct 30, 2017(expired)· nominal 20-yr term from priority
H10P 14/3416H10P 14/3248H10P 14/3216H10P 14/2926H10P 14/2911H10P 14/276H10P 14/271H10P 14/38H10P 14/24Y10S117/902C30B 25/00H01S 5/0206C30B 25/02H01S 2304/00Y10S438/942B82Y 20/00H01S 5/34333C30B 29/406H01S 2304/04H10P 14/20H10H 20/01335H10H 20/0137
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Claims
Abstract
The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 2 a mask layer 8 having a plurality of opening windows 10 disposed separate from each other; and an epitaxial layer growing step of growing on the mask layer 8 an epitaxial layer 12 made of GaN.
Claims
exact text as granted — not AI-modified1 - 35 . (canceled)
36 . A method of making a GaN single crystal substrate comprising:
an ingot forming step of growing on a GaN single crystal substrate obtained by executing (i) a mask layer forming step of forming on a GaAs substrate a mask layer having a plurality of opening windows disposed separate from each other, (ii) an epitaxial layer growing step of growing on said mask layer an epitaxial layer made of GaN to provide an epitaxial layer made of GaN so as to form an ingot of GaN single crystal; and a cutting step of cutting said ingot into a plurality of sheets.
37 . A method of making a GaN single crystal substrate comprising:
an ingot forming step of growing on a GaN single crystal substrate obtained by executing (i) a mask layer forming step of forming on a GaAs substrate a mask layer having a plurality of opening windows disposed separate from each other, (ii) an epitaxial layer growing step of growing on said mask layer an epitaxial layer made of GaN to provide an epitaxial layer made of GaN so as to form an ingot of GaN single crystal; and a cleaving step of cleaving said ingot into a plurality of sheets.
38 - 58 . (canceled)Join the waitlist — get patent alerts
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