Structure and method for manufacturing device with a v-shape channel nmosfet

Abstract

A CMOS structure includes a v-shape surface in an nMOSFET region. The v-shape surface has an orientation in a (100) plane and extends into a Si layer in the nMOSFET region. The nMOSFET gate dielectric layer is a high-k material, such as Hf02. The nMOSFET has a metal gate layer, such as Ta. Poly-Si is deposited on top of the metal gate layer.

1 . A device, comprising:
 a structure having an nMOSFET region;   a V-shape surface in the nMOSFET region, the V-shape surface having an orientation in a (100) plane and extending into a Si layer in the nMOSFET region;   a gate dielectric layer in the V-shape surface;   a metal gate layer on top of the gate dielectric layer; and   poly-Si on top of the metal gate layer.   
   
   
       2 . A device according to  claim 1 , wherein the gate dielectric layer is a high-k material. 
   
   
       3 . A device according to  claim 2 , wherein the high-k material is selected from the group consisting of: HfO2, ZrO 2 , Al 2 O 3 , TiO 2 , La 2 O 3 , SrTiO 3  and LaAlO 3 . 
   
   
       4 . A device according to  claim 2 , wherein the metal gate layer is selected from the group consisting of: TaN, TiN, TiAlN and WN. 
   
   
       5 . A device according to  claim 1 , wherein the poly-Si is in-situ doped with P. 
   
   
       6 . A device according to  claim 1 , wherein the V-shape surface has a depth less than the thickness of the Si layer.