Cleaning substrate of substrate processing equipment and heat resistant resin preferable thereof

Abstract

The present invention provides a cleaning substrate of a substrate processing equipment, which comprises a cleaning layer comprising a heat resistant resin with a storage modulus (1 Hz) at 20° C. up to 150° C. being 5×10 7 Pa to 1×10 9 Pa on at least one face of the substrate; and a polyimide resin suitable as the heat resistant resin for the cleaning layer and usable under circumstances possibly involving the generation of serious disadvantages due to silicone contamination, such as for HDD application and some semiconductor applications.

1 . A heat resistant resin obtained by polymerizing together tetracarboxylic dianhydride and a compound at least containing a polyether structure and having at least two terminal amine structures as a diamine component,
 wherein the heat resistant resin contains a structure unit derived from a reaction of the compound at least containing a polyether structure and having at least two terminal amine structures with the tetracarboxylic dianhydride at 10 to 80% by mass of the total mass of the resin after drying.   
   
   
       2 . The heat resistant resin according to  claim 1 , wherein the compound containing a polyether structure and having at least two terminal amine structures is a compound represented by the formula (1): 
     
       
         
         
             
             
         
       
       wherein a represents an integer of 2 or more. 
     
   
   
       3 . A heat resistant resin having a structure unit represented by the formula (R1): 
     
       
         
         
             
             
         
       
       wherein a represents an integer of 2 or more and Ar represents a structure containing at least one aromatic ring. 
     
   
   
       4 . The heat resistant resin according to  claim 1 , wherein the compound containing a polyether structure and having at least two terminal amine structures is a compound represented by the formula (2): 
     
       
         
         
             
             
         
       
       wherein b, c and d each independently represents an integer of 0 or more, provided that b+c+d is 2 or more. 
     
   
   
       5 . A heat resistant resin having a structure unit represented by the formula (R2): 
     
       
         
         
             
             
         
       
       wherein b, c and d each independently represents an integer of 0 or more, provided that b+c+d is 2 or more and Ar represents a structure containing at least one aromatic ring. 
     
   
   
       6 . The heat resistant resin according to claim  12 , wherein the compound containing a polyether structure and having at least two terminal amine structures is a compound represented by the formula (3): 
     
       
         
         
             
             
         
       
       wherein e, f and g each independently represents an integer of 0 or more, provided that e+f+g is 2 or more. 
     
   
   
       7 . A heat resistant resin having a structure unit represented by the formula (R3): 
     
       
         
         
             
             
         
       
       wherein e, f and g each independently represents an integer of 0 or more, provided that e+f+g is 2 or more and Ar represents a structure containing at least one aromatic ring. 
     
   
   
       8 . The heat resistant resin according to  claim 1 , wherein the compound containing a polyether structure and having at least two terminal amine structures is a compound represented by the formula (4): 
     
       
         
         
             
             
         
       
       wherein h represents an integer of 1 or more. 
     
   
   
       9 . A heat resistant resin having a structure unit represented by the formula (R4): 
     
       
         
         
             
             
         
       
       wherein h represents an integer of 1 or more and Ar represents a structure containing at least one aromatic ring.